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2N3439 - 

TRANSISTOR, SILICON; NPN; 350VCE; 450VCB; 7VEB; 1A ICC; 0.5A IB; 10 W @25 C

- 2N3439
声明：图片仅供参考，请以实物为准！
制造商：
- -
制造商产品编号：
2N3439
仓库库存编号：
70014171
技术数据表：
View 2N3439 Datasheet Datasheet
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2N3439产品概述

Silicon NPN Transistor, 350 V Collector to Emitter Voltage, 450 V Collector to Base Voltage
  • Silicon epitaxial planar mounted in jedec TO-39 metal case
    Used in consumer and industrial line-operated applications. Particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

    • 2N3439产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  1 A  
      Current, Gain  30  
      Diameter  9.4 mm  
      Dimensions  9.4 Dia. x 6.6 H mm  
      Frequency, Operating  15 MHz  
      Gain, DC Current, Maximum  160  
      Gain, DC Current, Minimum  40  
      Height  0.26" (6.6mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-39  
      Polarity  NPN  
      Power Dissipation  10 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  17.5 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Range  Maximum of +200 °C  
      Thermal Resistance, Junction to Ambient  175 °C/W  
      Transistor Type  NPN  
      Type  Driver, High Voltage, Switch  
      Voltage, Breakdown, Collector to Emitter  350 V  
      Voltage, Collector to Base  450 V  
      Voltage, Collector to Emitter  350 V  
      Voltage, Collector to Emitter, Saturation  0.5 V  
      Voltage, Emitter to Base  7 V  
      Voltage, Saturation, Base to Emitter  1.3 V  
      Voltage, Saturation, Collector to Emitter  0.5 V  
    关键词         

    2N3439相关搜索

    Brand/Series Transistor Series  - Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  - Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  - Configuration Common Base  Bipolar Transistors Configuration Common Base  - Bipolar Transistors Configuration Common Base   Current, Collector 1 A  - Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  - Bipolar Transistors Current, Collector 1 A   Current, Gain 30  - Current, Gain 30  Bipolar Transistors Current, Gain 30  - Bipolar Transistors Current, Gain 30   Diameter 9.4 mm  - Diameter 9.4 mm  Bipolar Transistors Diameter 9.4 mm  - Bipolar Transistors Diameter 9.4 mm   Dimensions 9.4 Dia. x 6.6 H mm  - Dimensions 9.4 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.4 Dia. x 6.6 H mm  - Bipolar Transistors Dimensions 9.4 Dia. x 6.6 H mm   Frequency, Operating 15 MHz  - Frequency, Operating 15 MHz  Bipolar Transistors Frequency, Operating 15 MHz  - Bipolar Transistors Frequency, Operating 15 MHz   Gain, DC Current, Maximum 160  - Gain, DC Current, Maximum 160  Bipolar Transistors Gain, DC Current, Maximum 160  - Bipolar Transistors Gain, DC Current, Maximum 160   Gain, DC Current, Minimum 40  - Gain, DC Current, Minimum 40  Bipolar Transistors Gain, DC Current, Minimum 40  - Bipolar Transistors Gain, DC Current, Minimum 40   Height 0.26" (6.6mm)  - Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  - Bipolar Transistors Height 0.26" (6.6mm)   Material Si  - Material Si  Bipolar Transistors Material Si  - Bipolar Transistors Material Si   Mounting Type Through Hole  - Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  - Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  - Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  - Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  - Number of Pins 3  Bipolar Transistors Number of Pins 3  - Bipolar Transistors Number of Pins 3   Package Type TO-39  - Package Type TO-39  Bipolar Transistors Package Type TO-39  - Bipolar Transistors Package Type TO-39   Polarity NPN  - Polarity NPN  Bipolar Transistors Polarity NPN  - Bipolar Transistors Polarity NPN   Power Dissipation 10 W  - Power Dissipation 10 W  Bipolar Transistors Power Dissipation 10 W  - Bipolar Transistors Power Dissipation 10 W   Primary Type Si  - Primary Type Si  Bipolar Transistors Primary Type Si  - Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 17.5 °C/W  - Resistance, Thermal, Junction to Case 17.5 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 17.5 °C/W  - Bipolar Transistors Resistance, Thermal, Junction to Case 17.5 °C/W   Temperature, Operating, Maximum +200 °C  - Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  - Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Range Maximum of +200 °C  - Temperature, Operating, Range Maximum of +200 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C  - Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C   Thermal Resistance, Junction to Ambient 175 °C/W  - Thermal Resistance, Junction to Ambient 175 °C/W  Bipolar Transistors Thermal Resistance, Junction to Ambient 175 °C/W  - Bipolar Transistors Thermal Resistance, Junction to Ambient 175 °C/W   Transistor Type NPN  - Transistor Type NPN  Bipolar Transistors Transistor Type NPN  - Bipolar Transistors Transistor Type NPN   Type Driver, High Voltage, Switch  - Type Driver, High Voltage, Switch  Bipolar Transistors Type Driver, High Voltage, Switch  - Bipolar Transistors Type Driver, High Voltage, Switch   Voltage, Breakdown, Collector to Emitter 350 V  - Voltage, Breakdown, Collector to Emitter 350 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 350 V  - Bipolar Transistors Voltage, Breakdown, Collector to Emitter 350 V   Voltage, Collector to Base 450 V  - Voltage, Collector to Base 450 V  Bipolar Transistors Voltage, Collector to Base 450 V  - Bipolar Transistors Voltage, Collector to Base 450 V   Voltage, Collector to Emitter 350 V  - Voltage, Collector to Emitter 350 V  Bipolar Transistors Voltage, Collector to Emitter 350 V  - Bipolar Transistors Voltage, Collector to Emitter 350 V   Voltage, Collector to Emitter, Saturation 0.5 V  - Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  - Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 7 V  - Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  - Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.3 V  - Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  - Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V   Voltage, Saturation, Collector to Emitter 0.5 V  - Voltage, Saturation, Collector to Emitter 0.5 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.5 V  - Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.5 V  
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