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AT27C4096-55JU - 

AT27C4096-55JU, EPROM Memory Chip 4Mbit 256Kx16 bit 55ns 4.5 to 5.5V 44-Pin PLCC

- AT27C4096-55JU
声明:图片仅供参考,请以实物为准!
制造商:
- -
制造商产品编号:
AT27C4096-55JU
仓库库存编号:
70123836
技术数据表:
View AT27C4096-55JU Datasheet Datasheet
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由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

AT27C4096-55JU产品信息

  Capacitance, Input  4 pF  
  Capacitance, Output  8 pF  
  Current, Input, Leakage  ±1 μA  
  Current, Operating  40 mA (Read)  
  Current, Output, Leakage  ±5 μA  
  Density  4M  
  Dimensions  16.662 x 16.662 x 4.572 mm  
  Height  0.18" (4.572mm)  
  In System Programmability  External  
  Interface  Parallel Bus  
  Length  0.656" <21/32> 16.668mm  
  Memory Capacity  4 Mbit  
  Memory Type  EPROM  
  Mounting Type  Surface Mount  
  Number of Bits per Word  16 bit  
  Number of Pins  44  
  Operating Voltage Range  Maximum of 5 V  
  Organization  256K x 16  
  Package Type  PLCC  
  Reprogramming Technique  OTP  
  Supply Voltage  5 V  
  Temperature, Operating  -40 to +85 °C  
  Temperature, Operating, Maximum  +85 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +85 °C  
  Time, Access  55 ns  
  Time, Address Hold  0 μs  
  Time, Address Setup  2 μs  
  Time, Fall  20 ns  
  Time, Rise  20 ns  
  Voltage, ESD  2000 V  
  Voltage, Input, High Level  5.5 V (Read)  
  Voltage, Input, Low Level  0.8 V (Read)  
  Voltage, Output, High Level  2.4 V (Read)  
  Voltage, Output, Low Level  0.4 V (Read)  
  Voltage, Programmable  5 V  
  Width  0.656" (16.662mm)  
关键词         

AT27C4096-55JU相关搜索

Capacitance, Input 4 pF  - Capacitance, Input 4 pF  EPROM Memory Chips Capacitance, Input 4 pF  - EPROM Memory Chips Capacitance, Input 4 pF   Capacitance, Output 8 pF  - Capacitance, Output 8 pF  EPROM Memory Chips Capacitance, Output 8 pF  - EPROM Memory Chips Capacitance, Output 8 pF   Current, Input, Leakage ±1 μA  - Current, Input, Leakage ±1 μA  EPROM Memory Chips Current, Input, Leakage ±1 μA  - EPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 40 mA (Read)  - Current, Operating 40 mA (Read)  EPROM Memory Chips Current, Operating 40 mA (Read)  - EPROM Memory Chips Current, Operating 40 mA (Read)   Current, Output, Leakage ±5 μA  - Current, Output, Leakage ±5 μA  EPROM Memory Chips Current, Output, Leakage ±5 μA  - EPROM Memory Chips Current, Output, Leakage ±5 μA   Density 4M  - Density 4M  EPROM Memory Chips Density 4M  - EPROM Memory Chips Density 4M   Dimensions 16.662 x 16.662 x 4.572 mm  - Dimensions 16.662 x 16.662 x 4.572 mm  EPROM Memory Chips Dimensions 16.662 x 16.662 x 4.572 mm  - EPROM Memory Chips Dimensions 16.662 x 16.662 x 4.572 mm   Height 0.18" (4.572mm)  - Height 0.18" (4.572mm)  EPROM Memory Chips Height 0.18" (4.572mm)  - EPROM Memory Chips Height 0.18" (4.572mm)   In System Programmability External  - In System Programmability External  EPROM Memory Chips In System Programmability External  - EPROM Memory Chips In System Programmability External   Interface Parallel Bus  - Interface Parallel Bus  EPROM Memory Chips Interface Parallel Bus  - EPROM Memory Chips Interface Parallel Bus   Length 0.656" <21/32> 16.668mm  - Length 0.656" <21/32> 16.668mm  EPROM Memory Chips Length 0.656" <21/32> 16.668mm  - EPROM Memory Chips Length 0.656" <21/32> 16.668mm   Memory Capacity 4 Mbit  - Memory Capacity 4 Mbit  EPROM Memory Chips Memory Capacity 4 Mbit  - EPROM Memory Chips Memory Capacity 4 Mbit   Memory Type EPROM  - Memory Type EPROM  EPROM Memory Chips Memory Type EPROM  - EPROM Memory Chips Memory Type EPROM   Mounting Type Surface Mount  - Mounting Type Surface Mount  EPROM Memory Chips Mounting Type Surface Mount  - EPROM Memory Chips Mounting Type Surface Mount   Number of Bits per Word 16 bit  - Number of Bits per Word 16 bit  EPROM Memory Chips Number of Bits per Word 16 bit  - EPROM Memory Chips Number of Bits per Word 16 bit   Number of Pins 44  - Number of Pins 44  EPROM Memory Chips Number of Pins 44  - EPROM Memory Chips Number of Pins 44   Operating Voltage Range Maximum of 5 V  - Operating Voltage Range Maximum of 5 V  EPROM Memory Chips Operating Voltage Range Maximum of 5 V  - EPROM Memory Chips Operating Voltage Range Maximum of 5 V   Organization 256K x 16  - Organization 256K x 16  EPROM Memory Chips Organization 256K x 16  - EPROM Memory Chips Organization 256K x 16   Package Type PLCC  - Package Type PLCC  EPROM Memory Chips Package Type PLCC  - EPROM Memory Chips Package Type PLCC   Reprogramming Technique OTP  - Reprogramming Technique OTP  EPROM Memory Chips Reprogramming Technique OTP  - EPROM Memory Chips Reprogramming Technique OTP   Supply Voltage 5 V  - Supply Voltage 5 V  EPROM Memory Chips Supply Voltage 5 V  - EPROM Memory Chips Supply Voltage 5 V   Temperature, Operating -40 to +85 °C  - Temperature, Operating -40 to +85 °C  EPROM Memory Chips Temperature, Operating -40 to +85 °C  - EPROM Memory Chips Temperature, Operating -40 to +85 °C   Temperature, Operating, Maximum +85 °C  - Temperature, Operating, Maximum +85 °C  EPROM Memory Chips Temperature, Operating, Maximum +85 °C  - EPROM Memory Chips Temperature, Operating, Maximum +85 °C   Temperature, Operating, Minimum -40 °C  - Temperature, Operating, Minimum -40 °C  EPROM Memory Chips Temperature, Operating, Minimum -40 °C  - EPROM Memory Chips Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +85 °C  - Temperature, Operating, Range -40 to +85 °C  EPROM Memory Chips Temperature, Operating, Range -40 to +85 °C  - EPROM Memory Chips Temperature, Operating, Range -40 to +85 °C   Time, Access 55 ns  - Time, Access 55 ns  EPROM Memory Chips Time, Access 55 ns  - EPROM Memory Chips Time, Access 55 ns   Time, Address Hold 0 μs  - Time, Address Hold 0 μs  EPROM Memory Chips Time, Address Hold 0 μs  - EPROM Memory Chips Time, Address Hold 0 μs   Time, Address Setup 2 μs  - Time, Address Setup 2 μs  EPROM Memory Chips Time, Address Setup 2 μs  - EPROM Memory Chips Time, Address Setup 2 μs   Time, Fall 20 ns  - Time, Fall 20 ns  EPROM Memory Chips Time, Fall 20 ns  - EPROM Memory Chips Time, Fall 20 ns   Time, Rise 20 ns  - Time, Rise 20 ns  EPROM Memory Chips Time, Rise 20 ns  - EPROM Memory Chips Time, Rise 20 ns   Voltage, ESD 2000 V  - Voltage, ESD 2000 V  EPROM Memory Chips Voltage, ESD 2000 V  - EPROM Memory Chips Voltage, ESD 2000 V   Voltage, Input, High Level 5.5 V (Read)  - Voltage, Input, High Level 5.5 V (Read)  EPROM Memory Chips Voltage, Input, High Level 5.5 V (Read)  - EPROM Memory Chips Voltage, Input, High Level 5.5 V (Read)   Voltage, Input, Low Level 0.8 V (Read)  - Voltage, Input, Low Level 0.8 V (Read)  EPROM Memory Chips Voltage, Input, Low Level 0.8 V (Read)  - EPROM Memory Chips Voltage, Input, Low Level 0.8 V (Read)   Voltage, Output, High Level 2.4 V (Read)  - Voltage, Output, High Level 2.4 V (Read)  EPROM Memory Chips Voltage, Output, High Level 2.4 V (Read)  - EPROM Memory Chips Voltage, Output, High Level 2.4 V (Read)   Voltage, Output, Low Level 0.4 V (Read)  - Voltage, Output, Low Level 0.4 V (Read)  EPROM Memory Chips Voltage, Output, Low Level 0.4 V (Read)  - EPROM Memory Chips Voltage, Output, Low Level 0.4 V (Read)   Voltage, Programmable 5 V  - Voltage, Programmable 5 V  EPROM Memory Chips Voltage, Programmable 5 V  - EPROM Memory Chips Voltage, Programmable 5 V   Width 0.656" (16.662mm)  - Width 0.656" (16.662mm)  EPROM Memory Chips Width 0.656" (16.662mm)  - EPROM Memory Chips Width 0.656" (16.662mm)  
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