VT935G-C -

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

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Photoconductive Cell, 80 mW @ 25 °C Power Dissipation, Temperature Range -40 °C to +75 °C

Plastic coated to protect active surface
1 Megohms (Min.) dark resistance. 35ms (typ.) @ 1 fc rise time.

Brand/Series	VT Series
Diameter, Lead	0.90 to 0.110 in.
Dimensions	0.172" to 0.192" Dia.
Gamma	0.90 (Typ.)
Length, Lead	1.38 to 1.62 in.
Power Dissipation	80 mW
Resistance	40.5 K (1 fc)
Resistance, Dark	1 M
Temperature, Operating, Maximum	+75 °C
Temperature, Operating, Minimum	-40 °C
Time, Fall	5 ms (Typ.) @ 1 fc
Time, Rise	35 ms (Typ.) @ 1 fc
Voltage Rating	100 V peak
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