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2SJ475-01 - 

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 45Milliohms; ID +/-25A; TO-220; PD 50W; VGS +/

Fuji Semiconductor 2SJ475-01
声明:图片仅供参考,请以实物为准!
制造商产品编号:
2SJ475-01
仓库库存编号:
70212475
技术数据表:
View 2SJ475-01 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

2SJ475-01产品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
  • 2SJ475-01产品信息

      Brand/Series  FAP III Series  
      Capacitance, Input  2000 pF @ -25 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  ±25 A  
      Dimensions  10 x 4.5 x 15 mm  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-220AB  
      Polarization  P-Channel  
      Power Dissipation  50 W  
      Resistance, Drain to Source On  110 mΩ  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  190 ns  
      Time, Turn-On Delay  15 ns  
      Transconductance, Forward  15 S  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  -2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.177" (4.5mm)  
    关键词         

    2SJ475-01相关搜索

    Brand/Series FAP III Series  Fuji Semiconductor Brand/Series FAP III Series  MOSFET Transistors Brand/Series FAP III Series  Fuji Semiconductor MOSFET Transistors Brand/Series FAP III Series   Capacitance, Input 2000 pF @ -25 V  Fuji Semiconductor Capacitance, Input 2000 pF @ -25 V  MOSFET Transistors Capacitance, Input 2000 pF @ -25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2000 pF @ -25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  Fuji Semiconductor Channel Type P  MOSFET Transistors Channel Type P  Fuji Semiconductor MOSFET Transistors Channel Type P   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±25 A  Fuji Semiconductor Current, Drain ±25 A  MOSFET Transistors Current, Drain ±25 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±25 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization P-Channel  Fuji Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Fuji Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 50 W  Fuji Semiconductor Power Dissipation 50 W  MOSFET Transistors Power Dissipation 50 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 50 W   Resistance, Drain to Source On 110 mΩ  Fuji Semiconductor Resistance, Drain to Source On 110 mΩ  MOSFET Transistors Resistance, Drain to Source On 110 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 110 mΩ   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 190 ns  Fuji Semiconductor Time, Turn-Off Delay 190 ns  MOSFET Transistors Time, Turn-Off Delay 190 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 190 ns   Time, Turn-On Delay 15 ns  Fuji Semiconductor Time, Turn-On Delay 15 ns  MOSFET Transistors Time, Turn-On Delay 15 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 15 ns   Transconductance, Forward 15 S  Fuji Semiconductor Transconductance, Forward 15 S  MOSFET Transistors Transconductance, Forward 15 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 15 S   Voltage, Breakdown, Drain to Source -60 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Fuji Semiconductor Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -2 V  Fuji Semiconductor Voltage, Forward, Diode -2 V  MOSFET Transistors Voltage, Forward, Diode -2 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode -2 V   Voltage, Gate to Source ±20 V  Fuji Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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