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2SK2765-01 - 

MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V

Fuji Semiconductor 2SK2765-01
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2SK2765-01
仓库库存编号：
70212495
技术数据表：
View 2SK2765-01 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2SK2765-01产品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`

    • 2SK2765-01产品信息

      Capacitance, Input  900 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±7 A  
      Dimensions  15.5 x 4.5 x 19.5 mm  
      Height  0.768" (19.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3P  
      Polarization  N-Channel  
      Power Dissipation  125 W  
      Resistance, Drain to Source On  2 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  80 ns  
      Time, Turn-On Delay  25 ns  
      Transconductance, Forward  4 S  
      Voltage, Breakdown, Drain to Source  800 V  
      Voltage, Drain to Source  800 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±35 V  
      Width  0.177" (4.5mm)  
    关键词         

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