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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance`

Application	For switching regulators, UPS (Uninterruptible Power Supply), DC to DC Converters
Capacitance, Input	2200 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±20 A
Dimensions	15.5 x 4.5 x 19.5 mm
Height	0.768" (19.5mm)
Length	0.61" (15.5mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	150 °C
Package Type	TO-3P
Polarization	N-Channel
Power Dissipation	150 W
Resistance, Drain to Source On	0.38 Ω
Resistance, Thermal, Junction to Case	0.83 °C?W (Max.)
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	35 °C⁄W
Time, Turn-Off Delay	160 ns
Time, Turn-On Delay	20 ns
Transconductance, Forward	15 S
Voltage, Breakdown, Drain to Source	500 V
Voltage, Drain to Source	500 V
Voltage, Forward, Diode	1.1 V
Voltage, Gate to Source	±30 V
Width	0.177" (4.5mm)
关键词

Application For switching regulators, UPS (Uninterruptible Power Supply), DC to DC Converters  Fuji Semiconductor Application For switching regulators, UPS (Uninterruptible Power Supply), DC to DC Converters  MOSFET Transistors Application For switching regulators, UPS (Uninterruptible Power Supply), DC to DC Converters  Fuji Semiconductor MOSFET Transistors Application For switching regulators, UPS (Uninterruptible Power Supply), DC to DC Converters   Capacitance, Input 2200 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2200 pF @ 25 V  MOSFET Transistors Capacitance, Input 2200 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2200 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±20 A  Fuji Semiconductor Current, Drain ±20 A  MOSFET Transistors Current, Drain ±20 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±20 A   Dimensions 15.5 x 4.5 x 19.5 mm  Fuji Semiconductor Dimensions 15.5 x 4.5 x 19.5 mm  MOSFET Transistors Dimensions 15.5 x 4.5 x 19.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 4.5 x 19.5 mm   Height 0.768" (19.5mm)  Fuji Semiconductor Height 0.768" (19.5mm)  MOSFET Transistors Height 0.768" (19.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.768" (19.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  MOSFET Transistors Length 0.61" (15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature 150 °C  Fuji Semiconductor Operating and Storage Temperature 150 °C  MOSFET Transistors Operating and Storage Temperature 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature 150 °C   Package Type TO-3P  Fuji Semiconductor Package Type TO-3P  MOSFET Transistors Package Type TO-3P  Fuji Semiconductor MOSFET Transistors Package Type TO-3P   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 150 W  Fuji Semiconductor Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 0.38 Ω  Fuji Semiconductor Resistance, Drain to Source On 0.38 Ω  MOSFET Transistors Resistance, Drain to Source On 0.38 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.38 Ω   Resistance, Thermal, Junction to Case 0.83 °C?W (Max.)  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.83 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 0.83 °C?W (Max.)  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.83 °C?W (Max.)   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 35 °C⁄W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 35 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 35 °C⁄W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 35 °C⁄W   Time, Turn-Off Delay 160 ns  Fuji Semiconductor Time, Turn-Off Delay 160 ns  MOSFET Transistors Time, Turn-Off Delay 160 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 160 ns   Time, Turn-On Delay 20 ns  Fuji Semiconductor Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 15 S  Fuji Semiconductor Transconductance, Forward 15 S  MOSFET Transistors Transconductance, Forward 15 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 15 S   Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  Fuji Semiconductor Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)