Capacitance, Input |
920 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
±7 A |
|
Dimensions |
10 x 4.5 x 15 mm |
|
Gate Charge, Total |
25 nC |
|
Height |
0.591" (15mm) |
|
Length |
0.393" (10mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220AB |
|
Polarization |
N-Channel |
|
Power Dissipation |
225 W |
|
Resistance, Drain to Source On |
2 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
45 ns |
|
Time, Turn-On Delay |
22 ns |
|
Transconductance, Forward |
8.2 S |
|
Typical Gate Charge @ Vgs |
25 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
900 V |
|
Voltage, Drain to Source |
900 V |
|
Voltage, Forward, Diode |
0.9 V |
|
Voltage, Gate to Source |
±30 V |
|
Width |
0.177" (4.5mm) |
|
关键词 |