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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance`

Application	Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Capacitance, Input	1250 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±10 A
Dimensions	15.5 x 5 x 21.5 mm
Gate Charge, Total	34.5 nC
Height	0.846" (21.5mm)
Length	0.61" (15.5mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to 150 °C
Package Type	TO-247
Polarization	N-Channel
Power Dissipation	270 W
Resistance, Drain to Source On	1.4 Ω
Resistance, Thermal, Junction to Case	0.463 °C?W (Max.)
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	50 °C⁄W
Time, Turn-Off Delay	60 ns
Time, Turn-On Delay	26 ns
Transconductance, Forward	12 S
Typical Gate Charge @ Vgs	34.5 nC @ 10 V
Voltage, Breakdown, Drain to Source	900 V
Voltage, Drain to Source	900 V
Voltage, Forward, Diode	0.9 V
Voltage, Gate to Source	±30 V
Width	0.197" (5mm)
关键词

Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  MOSFET Transistors Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor MOSFET Transistors Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.   Capacitance, Input 1250 pF @ 25 V  Fuji Semiconductor Capacitance, Input 1250 pF @ 25 V  MOSFET Transistors Capacitance, Input 1250 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1250 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±10 A  Fuji Semiconductor Current, Drain ±10 A  MOSFET Transistors Current, Drain ±10 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±10 A   Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor Dimensions 15.5 x 5 x 21.5 mm  MOSFET Transistors Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 5 x 21.5 mm   Gate Charge, Total 34.5 nC  Fuji Semiconductor Gate Charge, Total 34.5 nC  MOSFET Transistors Gate Charge, Total 34.5 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 34.5 nC   Height 0.846" (21.5mm)  Fuji Semiconductor Height 0.846" (21.5mm)  MOSFET Transistors Height 0.846" (21.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.846" (21.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  MOSFET Transistors Length 0.61" (15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-247  Fuji Semiconductor Package Type TO-247  MOSFET Transistors Package Type TO-247  Fuji Semiconductor MOSFET Transistors Package Type TO-247   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 270 W  Fuji Semiconductor Power Dissipation 270 W  MOSFET Transistors Power Dissipation 270 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 270 W   Resistance, Drain to Source On 1.4 Ω  Fuji Semiconductor Resistance, Drain to Source On 1.4 Ω  MOSFET Transistors Resistance, Drain to Source On 1.4 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 1.4 Ω   Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 50 °C⁄W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 50 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C⁄W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C⁄W   Time, Turn-Off Delay 60 ns  Fuji Semiconductor Time, Turn-Off Delay 60 ns  MOSFET Transistors Time, Turn-Off Delay 60 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 60 ns   Time, Turn-On Delay 26 ns  Fuji Semiconductor Time, Turn-On Delay 26 ns  MOSFET Transistors Time, Turn-On Delay 26 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 26 ns   Transconductance, Forward 12 S  Fuji Semiconductor Transconductance, Forward 12 S  MOSFET Transistors Transconductance, Forward 12 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 12 S   Typical Gate Charge @ Vgs 34.5 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 34.5 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 34.5 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 34.5 nC @ 10 V   Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 900 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V   Voltage, Drain to Source 900 V  Fuji Semiconductor Voltage, Drain to Source 900 V  MOSFET Transistors Voltage, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 900 V   Voltage, Forward, Diode 0.9 V  Fuji Semiconductor Voltage, Forward, Diode 0.9 V  MOSFET Transistors Voltage, Forward, Diode 0.9 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.9 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Fuji Semiconductor MOSFET Transistors Width 0.197" (5mm)