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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA =Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance

Application	Switching regulators, UPS (Uninterrupted Power Supply), DC-DC converters
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±73 A
Current, Drain, Pulse	±292 mA
Dimensions	10 x 4.5 x 15 mm
Gate Charge, Total	52 nC
Length	0.393" (10mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to 150 °C
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	270 W
Resistance, Thermal, Junction to Case	0.46300000000000002 °C/W
Temperature, Operating, Maximum	+150 °C
Thermal Resistance, Junction to Ambient	62 °C/W
Time, Turn-On Delay	20 ns
Transconductance, Forward	30 S
Typical Gate Charge @ Vgs	52 nC @ 10 V
Voltage, Breakdown, Drain to Source	100 V
Voltage, Drain to Source	100 V
Voltage, Forward, Diode	1.1 V
Voltage, Gate to Source	±30 V
Voltage, Threshold	2.5-3.5 V
关键词

Application Switching regulators, UPS (Uninterrupted Power Supply), DC-DC converters  Fuji Semiconductor Application Switching regulators, UPS (Uninterrupted Power Supply), DC-DC converters  MOSFET Transistors Application Switching regulators, UPS (Uninterrupted Power Supply), DC-DC converters  Fuji Semiconductor MOSFET Transistors Application Switching regulators, UPS (Uninterrupted Power Supply), DC-DC converters   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±73 A  Fuji Semiconductor Current, Drain ±73 A  MOSFET Transistors Current, Drain ±73 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±73 A   Current, Drain, Pulse ±292 mA  Fuji Semiconductor Current, Drain, Pulse ±292 mA  MOSFET Transistors Current, Drain, Pulse ±292 mA  Fuji Semiconductor MOSFET Transistors Current, Drain, Pulse ±292 mA   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 52 nC  Fuji Semiconductor Gate Charge, Total 52 nC  MOSFET Transistors Gate Charge, Total 52 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 52 nC   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 270 W  Fuji Semiconductor Power Dissipation 270 W  MOSFET Transistors Power Dissipation 270 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 270 W   Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Turn-On Delay 20 ns  Fuji Semiconductor Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 30 S  Fuji Semiconductor Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 30 S   Typical Gate Charge @ Vgs 52 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 52 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 52 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 52 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  Fuji Semiconductor Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V