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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance`

Capacitance, Input	770 pF @ 75 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±18 A
Dimensions	10 x 4.5 x 15 mm
Gate Charge, Total	21 nC
Height	0.591" (15mm)
Length	0.393" (10mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	105 W
Resistance, Drain to Source On	170 mΩ
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	22 ns
Time, Turn-On Delay	12 ns
Transconductance, Forward	11 S
Typical Gate Charge @ Vgs	21 nC @ 10 V
Voltage, Breakdown, Drain to Source	200 V
Voltage, Drain to Source	200 V
Voltage, Forward, Diode	1.1 V
Voltage, Gate to Source	±30 V
Width	0.177" (4.5mm)
关键词

Capacitance, Input 770 pF @ 75 V  Fuji Semiconductor Capacitance, Input 770 pF @ 75 V  MOSFET Transistors Capacitance, Input 770 pF @ 75 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 770 pF @ 75 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±18 A  Fuji Semiconductor Current, Drain ±18 A  MOSFET Transistors Current, Drain ±18 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±18 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 21 nC  Fuji Semiconductor Gate Charge, Total 21 nC  MOSFET Transistors Gate Charge, Total 21 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 21 nC   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 105 W  Fuji Semiconductor Power Dissipation 105 W  MOSFET Transistors Power Dissipation 105 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 105 W   Resistance, Drain to Source On 170 mΩ  Fuji Semiconductor Resistance, Drain to Source On 170 mΩ  MOSFET Transistors Resistance, Drain to Source On 170 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 170 mΩ   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 22 ns  Fuji Semiconductor Time, Turn-Off Delay 22 ns  MOSFET Transistors Time, Turn-Off Delay 22 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 22 ns   Time, Turn-On Delay 12 ns  Fuji Semiconductor Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 11 S  Fuji Semiconductor Transconductance, Forward 11 S  MOSFET Transistors Transconductance, Forward 11 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 11 S   Typical Gate Charge @ Vgs 21 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 21 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ 10 V   Voltage, Breakdown, Drain to Source 200 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 200 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V   Voltage, Drain to Source 200 V  Fuji Semiconductor Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)