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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance`

Application	For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Capacitance, Input	1100 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±9 A
Dimensions	10 x 4.5 x 15 mm
Gate Charge, Total	31 nC
Height	0.591" (15mm)
Length	0.393" (10mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	150 °C
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	270 W
Resistance, Drain to Source On	1.58 Ω
Resistance, Thermal, Junction to Case	0.463 °C?W (Max.)
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	62 °C⁄W
Time, Turn-Off Delay	50 ns
Time, Turn-On Delay	25 ns
Transconductance, Forward	10 S
Typical Gate Charge @ Vgs	31 nC @ 10 V
Voltage, Breakdown, Drain to Source	900 V
Voltage, Drain to Source	900 V
Voltage, Forward, Diode	0.9 V
Voltage, Gate to Source	±30 V
Width	0.177" (4.5mm)
关键词

Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  MOSFET Transistors Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor MOSFET Transistors Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.   Capacitance, Input 1100 pF @ 25 V  Fuji Semiconductor Capacitance, Input 1100 pF @ 25 V  MOSFET Transistors Capacitance, Input 1100 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1100 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±9 A  Fuji Semiconductor Current, Drain ±9 A  MOSFET Transistors Current, Drain ±9 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±9 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 31 nC  Fuji Semiconductor Gate Charge, Total 31 nC  MOSFET Transistors Gate Charge, Total 31 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 31 nC   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature 150 °C  Fuji Semiconductor Operating and Storage Temperature 150 °C  MOSFET Transistors Operating and Storage Temperature 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 270 W  Fuji Semiconductor Power Dissipation 270 W  MOSFET Transistors Power Dissipation 270 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 270 W   Resistance, Drain to Source On 1.58 Ω  Fuji Semiconductor Resistance, Drain to Source On 1.58 Ω  MOSFET Transistors Resistance, Drain to Source On 1.58 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 1.58 Ω   Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.463 °C?W (Max.)   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 50 ns  Fuji Semiconductor Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 25 ns  Fuji Semiconductor Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 10 S  Fuji Semiconductor Transconductance, Forward 10 S  MOSFET Transistors Transconductance, Forward 10 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 10 S   Typical Gate Charge @ Vgs 31 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 31 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 31 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 31 nC @ 10 V   Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 900 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V   Voltage, Drain to Source 900 V  Fuji Semiconductor Voltage, Drain to Source 900 V  MOSFET Transistors Voltage, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 900 V   Voltage, Forward, Diode 0.9 V  Fuji Semiconductor Voltage, Forward, Diode 0.9 V  MOSFET Transistors Voltage, Forward, Diode 0.9 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.9 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)