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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance`

Capacitance, Input	3800 pF @ 75 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	59 A
Dimensions	15.5 x 5 x 21.5 mm
Gate Charge, Total	80 nC
Height	0.846" (21.5mm)
Length	0.61" (15.5mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-247
Polarization	N-Channel
Power Dissipation	410 W
Resistance, Drain to Source On	53 mΩ
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	70 ns
Time, Turn-On Delay	40 ns
Transconductance, Forward	24 S
Typical Gate Charge @ Vgs	80 nC @ 10 V
Voltage, Breakdown, Drain to Source	250 V
Voltage, Drain to Source	250 V
Voltage, Forward, Diode	1.2 V
Voltage, Gate to Source	±30 V
Width	0.197" (5mm)
关键词

Capacitance, Input 3800 pF @ 75 V  Fuji Semiconductor Capacitance, Input 3800 pF @ 75 V  MOSFET Transistors Capacitance, Input 3800 pF @ 75 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 3800 pF @ 75 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain 59 A  Fuji Semiconductor Current, Drain 59 A  MOSFET Transistors Current, Drain 59 A  Fuji Semiconductor MOSFET Transistors Current, Drain 59 A   Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor Dimensions 15.5 x 5 x 21.5 mm  MOSFET Transistors Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 5 x 21.5 mm   Gate Charge, Total 80 nC  Fuji Semiconductor Gate Charge, Total 80 nC  MOSFET Transistors Gate Charge, Total 80 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 80 nC   Height 0.846" (21.5mm)  Fuji Semiconductor Height 0.846" (21.5mm)  MOSFET Transistors Height 0.846" (21.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.846" (21.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  MOSFET Transistors Length 0.61" (15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-247  Fuji Semiconductor Package Type TO-247  MOSFET Transistors Package Type TO-247  Fuji Semiconductor MOSFET Transistors Package Type TO-247   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 410 W  Fuji Semiconductor Power Dissipation 410 W  MOSFET Transistors Power Dissipation 410 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 410 W   Resistance, Drain to Source On 53 mΩ  Fuji Semiconductor Resistance, Drain to Source On 53 mΩ  MOSFET Transistors Resistance, Drain to Source On 53 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 53 mΩ   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 70 ns  Fuji Semiconductor Time, Turn-Off Delay 70 ns  MOSFET Transistors Time, Turn-Off Delay 70 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 70 ns   Time, Turn-On Delay 40 ns  Fuji Semiconductor Time, Turn-On Delay 40 ns  MOSFET Transistors Time, Turn-On Delay 40 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 40 ns   Transconductance, Forward 24 S  Fuji Semiconductor Transconductance, Forward 24 S  MOSFET Transistors Transconductance, Forward 24 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 24 S   Typical Gate Charge @ Vgs 80 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 80 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 80 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 80 nC @ 10 V   Voltage, Breakdown, Drain to Source 250 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 250 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V   Voltage, Drain to Source 250 V  Fuji Semiconductor Voltage, Drain to Source 250 V  MOSFET Transistors Voltage, Drain to Source 250 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 250 V   Voltage, Forward, Diode 1.2 V  Fuji Semiconductor Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Fuji Semiconductor MOSFET Transistors Width 0.197" (5mm)