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2SK902 - 

MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 0.07Ohm; ID 30A; SC-65; PD 150W; VGS +/-20V; VF

Fuji Semiconductor 2SK902
声明:图片仅供参考,请以实物为准!
制造商产品编号:
2SK902
仓库库存编号:
70212509
技术数据表:
View 2SK902 Datasheet Datasheet
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由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

2SK902产品概述

SC-65 (EIAJ) Package Type 30 A Current Drain N-Channel Silicon Power MOSFET
  • High speed switching
  • Low on-resistance

  • F-I Series = Low RDS(ON)
  • F-II Series = VGS ±30 V, Reduced Turn Off Time
  • FAP-II Series = High Avalanche Ruggedness
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • F-I Series = Low RDS(ON)
  • F-II Series = VGS ±30 V, Reduced Turn Off Time
  • FAP-II Series = High Avalanche Ruggedness
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • 2SK902产品信息

      Application  UPS, DC to DC converters, general purpose power amplifier  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  30 A  
      Current, Drain, Pulse  120  
      Height  0.768" (19.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  SC-65  
      Polarization  N-Channel  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  0.1 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  700 ns  
      Time, Turn-On Delay  200 ns  
      Transconductance, Forward  20 S  
      Voltage, Breakdown, Drain to Source  250 V  
      Voltage, Drain to Source  250 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±20 V  
    关键词         

    2SK902相关搜索

    Application UPS, DC to DC converters, general purpose power amplifier  Fuji Semiconductor Application UPS, DC to DC converters, general purpose power amplifier  MOSFET Transistors Application UPS, DC to DC converters, general purpose power amplifier  Fuji Semiconductor MOSFET Transistors Application UPS, DC to DC converters, general purpose power amplifier   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain 30 A  Fuji Semiconductor Current, Drain 30 A  MOSFET Transistors Current, Drain 30 A  Fuji Semiconductor MOSFET Transistors Current, 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Source ±20 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V  
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