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Features:

Low Power Loss
Low switching Surge and Noise

High Reliability, High Ruggedness (RBSOA, SCSOA etc.)
Applications:

Uninterruptible Power Supply

Power Conditioner

Power Factor Correction Circuit

Brand/Series	High-Speed V- Series
Capacitance, Input	2350 pF
Channel Type	N
Configuration	Single
Current, Collector	53 A
Current, Continuous Collector	53 A
Dimensions	15.9 x 5.03 x 20.95 mm
Energy Rating	1.6 mJ
Height	0.825" (20.95mm)
Length	0.625" <5/8> (15.875mm)
Mounting Type	Through Hole
Number of Pins	3
Package Type	TO-247
Polarity	N-Channel
Power Dissipation	260 W
Resistance, Thermal, Junction to Case	0.568 °C/W
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +175 °C
Time, Fall	38 ns
Time, Reverse Recovery	380 ns
Time, Rise	28 ns
Time, Turn-Off Delay	260 ns
Time, Turn-On Delay	28 ns
Transistor Type	N-Channel
Type	High-Speed
Voltage, Collector to Emitter	1200 V
Voltage, Collector to Emitter Shorted	1200 V
Voltage, Forward	2.8 V
Voltage, Gate to Emitter	±20 V
Voltage, Gate to Emitter Threshold	V
Width	0.198" (5.03mm)
关键词

Brand/Series High-Speed V- Series  Fuji Semiconductor Brand/Series High-Speed V- Series  IGBT Transistor Modules Brand/Series High-Speed V- Series  Fuji Semiconductor IGBT Transistor Modules Brand/Series High-Speed V- Series   Capacitance, Input 2350 pF  Fuji Semiconductor Capacitance, Input 2350 pF  IGBT Transistor Modules Capacitance, Input 2350 pF  Fuji Semiconductor IGBT Transistor Modules Capacitance, Input 2350 pF   Channel Type N  Fuji Semiconductor Channel Type N  IGBT Transistor Modules Channel Type N  Fuji Semiconductor IGBT Transistor Modules Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  IGBT Transistor Modules Configuration Single  Fuji Semiconductor IGBT Transistor Modules Configuration Single   Current, Collector 53 A  Fuji Semiconductor Current, Collector 53 A  IGBT Transistor Modules Current, Collector 53 A  Fuji Semiconductor IGBT Transistor Modules Current, Collector 53 A   Current, Continuous Collector 53 A  Fuji Semiconductor Current, Continuous Collector 53 A  IGBT Transistor Modules Current, Continuous Collector 53 A  Fuji Semiconductor IGBT Transistor Modules Current, Continuous Collector 53 A   Dimensions 15.9 x 5.03 x 20.95 mm  Fuji Semiconductor Dimensions 15.9 x 5.03 x 20.95 mm  IGBT Transistor Modules Dimensions 15.9 x 5.03 x 20.95 mm  Fuji Semiconductor IGBT Transistor Modules Dimensions 15.9 x 5.03 x 20.95 mm   Energy Rating 1.6 mJ  Fuji Semiconductor Energy Rating 1.6 mJ  IGBT Transistor Modules Energy Rating 1.6 mJ  Fuji Semiconductor IGBT Transistor Modules Energy Rating 1.6 mJ   Height 0.825" (20.95mm)  Fuji Semiconductor Height 0.825" (20.95mm)  IGBT Transistor Modules Height 0.825" (20.95mm)  Fuji Semiconductor IGBT Transistor Modules Height 0.825" (20.95mm)   Length 0.625" <5/8> (15.875mm)  Fuji Semiconductor Length 0.625" <5/8> (15.875mm)  IGBT Transistor Modules Length 0.625" <5/8> (15.875mm)  Fuji Semiconductor IGBT Transistor Modules Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  IGBT Transistor Modules Mounting Type Through Hole  Fuji Semiconductor IGBT Transistor Modules Mounting Type Through Hole   Number of Pins 3  Fuji Semiconductor Number of Pins 3  IGBT Transistor Modules Number of Pins 3  Fuji Semiconductor IGBT Transistor Modules Number of Pins 3   Package Type TO-247  Fuji Semiconductor Package Type TO-247  IGBT Transistor Modules Package Type TO-247  Fuji Semiconductor IGBT Transistor Modules Package Type TO-247   Polarity N-Channel  Fuji Semiconductor Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  Fuji Semiconductor IGBT Transistor Modules Polarity N-Channel   Power Dissipation 260 W  Fuji Semiconductor Power Dissipation 260 W  IGBT Transistor Modules Power Dissipation 260 W  Fuji Semiconductor IGBT Transistor Modules Power Dissipation 260 W   Resistance, Thermal, Junction to Case 0.568 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.568 °C/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.568 °C/W  Fuji Semiconductor IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.568 °C/W   Temperature, Operating, Maximum +175 °C  Fuji Semiconductor Temperature, Operating, Maximum +175 °C  IGBT Transistor Modules Temperature, Operating, Maximum +175 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -40 °C  Fuji Semiconductor Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +175 °C  Fuji Semiconductor Temperature, Operating, Range -40 to +175 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C   Time, Fall 38 ns  Fuji Semiconductor Time, Fall 38 ns  IGBT Transistor Modules Time, Fall 38 ns  Fuji Semiconductor IGBT Transistor Modules Time, Fall 38 ns   Time, Reverse Recovery 380 ns  Fuji Semiconductor Time, Reverse Recovery 380 ns  IGBT Transistor Modules Time, Reverse Recovery 380 ns  Fuji Semiconductor IGBT Transistor Modules Time, Reverse Recovery 380 ns   Time, Rise 28 ns  Fuji Semiconductor Time, Rise 28 ns  IGBT Transistor Modules Time, Rise 28 ns  Fuji Semiconductor IGBT Transistor Modules Time, Rise 28 ns   Time, Turn-Off Delay 260 ns  Fuji Semiconductor Time, Turn-Off Delay 260 ns  IGBT Transistor Modules Time, Turn-Off Delay 260 ns  Fuji Semiconductor IGBT Transistor Modules Time, Turn-Off Delay 260 ns   Time, Turn-On Delay 28 ns  Fuji Semiconductor Time, Turn-On Delay 28 ns  IGBT Transistor Modules Time, Turn-On Delay 28 ns  Fuji Semiconductor IGBT Transistor Modules Time, Turn-On Delay 28 ns   Transistor Type N-Channel  Fuji Semiconductor Transistor Type N-Channel  IGBT Transistor Modules Transistor Type N-Channel  Fuji Semiconductor IGBT Transistor Modules Transistor Type N-Channel   Type High-Speed  Fuji Semiconductor Type High-Speed  IGBT Transistor Modules Type High-Speed  Fuji Semiconductor IGBT Transistor Modules Type High-Speed   Voltage, Collector to Emitter 1200 V  Fuji Semiconductor Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  Fuji Semiconductor Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Forward 2.8 V  Fuji Semiconductor Voltage, Forward 2.8 V  IGBT Transistor Modules Voltage, Forward 2.8 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Forward 2.8 V   Voltage, Gate to Emitter ±20 V  Fuji Semiconductor Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold V  Fuji Semiconductor Voltage, Gate to Emitter Threshold V  IGBT Transistor Modules Voltage, Gate to Emitter Threshold V  Fuji Semiconductor IGBT Transistor Modules Voltage, Gate to Emitter Threshold V   Width 0.198" (5.03mm)  Fuji Semiconductor Width 0.198" (5.03mm)  IGBT Transistor Modules Width 0.198" (5.03mm)  Fuji Semiconductor IGBT Transistor Modules Width 0.198" (5.03mm)