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MOSFET & IGBT Gate Drivers, Half-Bridge, Infineon
A range of High-Side and Low-Side Half-Bridge MOSFET & IGBT Gate Driver ICs from Infineon

Bridge Type	Half Bridge
Configuration	Inverting
Current, Input Bias	1 (Low), 10 (High) μA
Current, Peak	210 (High), 360 (Low) mA
Dimensions	5.00 x 4.00 x 1.5 mm
Driver Type	High & Low Side
Fall Time	Maximum of 90 ns
Height	0.059" (1.5mm)
High and Low Sides Dependency	Synchronous
Input Logic Compatibility	CMOS, LSTTL
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Drivers	2
Number of Outputs	2
Number of Pins	8
Operating Voltage Range	10 to 20 V
Package Type	SOIC
Temperature, Operating, Maximum	+125 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +125 °C
Time Delay	220 (Turn-Off), 820 (Turn-On)
Time, Rise	Maximum of 170 ns
Width	0.157" (4mm)
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• International Rectifier
  MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 60 Milliohms; ID -38A; D2Pak; PD 170W; -55degc
  
  型号：IRF5210SPBF
  仓库库存编号：70017467
  
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Bridge Type Half Bridge  International Rectifier Bridge Type Half Bridge  MOSFET Power Drivers Bridge Type Half Bridge  International Rectifier MOSFET Power Drivers Bridge Type Half Bridge   Configuration Inverting  International Rectifier Configuration Inverting  MOSFET Power Drivers Configuration Inverting  International Rectifier MOSFET Power Drivers Configuration Inverting   Current, Input Bias 1 (Low), 10 (High) μA  International Rectifier Current, Input Bias 1 (Low), 10 (High) μA  MOSFET Power Drivers Current, Input Bias 1 (Low), 10 (High) μA  International Rectifier MOSFET Power Drivers Current, Input Bias 1 (Low), 10 (High) μA   Current, Peak 210 (High), 360 (Low) mA  International Rectifier Current, Peak 210 (High), 360 (Low) mA  MOSFET Power Drivers Current, Peak 210 (High), 360 (Low) mA  International Rectifier MOSFET Power Drivers Current, Peak 210 (High), 360 (Low) mA   Dimensions 5.00 x 4.00 x 1.5 mm  International Rectifier Dimensions 5.00 x 4.00 x 1.5 mm  MOSFET Power Drivers Dimensions 5.00 x 4.00 x 1.5 mm  International Rectifier MOSFET Power Drivers Dimensions 5.00 x 4.00 x 1.5 mm   Driver Type High & Low Side  International Rectifier Driver Type High & Low Side  MOSFET Power Drivers Driver Type High & Low Side  International Rectifier MOSFET Power Drivers Driver Type High & Low Side   Fall Time Maximum of 90 ns  International Rectifier Fall Time Maximum of 90 ns  MOSFET Power Drivers Fall Time Maximum of 90 ns  International Rectifier MOSFET Power Drivers Fall Time Maximum of 90 ns   Height 0.059" (1.5mm)  International Rectifier Height 0.059" (1.5mm)  MOSFET Power Drivers Height 0.059" (1.5mm)  International Rectifier MOSFET Power Drivers Height 0.059" (1.5mm)   High and Low Sides Dependency Synchronous  International Rectifier High and Low Sides Dependency Synchronous  MOSFET Power Drivers High and Low Sides Dependency Synchronous  International Rectifier MOSFET Power Drivers High and Low Sides Dependency Synchronous   Input Logic Compatibility CMOS, LSTTL  International Rectifier Input Logic Compatibility CMOS, LSTTL  MOSFET Power Drivers Input Logic Compatibility CMOS, LSTTL  International Rectifier MOSFET Power Drivers Input Logic Compatibility CMOS, LSTTL   Length 0.196" (5mm)  International Rectifier Length 0.196" (5mm)  MOSFET Power Drivers Length 0.196" (5mm)  International Rectifier MOSFET Power Drivers Length 0.196" (5mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Power Drivers Mounting Type Surface Mount  International Rectifier MOSFET Power Drivers Mounting Type Surface Mount   Number of Drivers 2  International Rectifier Number of Drivers 2  MOSFET Power Drivers Number of Drivers 2  International Rectifier MOSFET Power Drivers Number of Drivers 2   Number of Outputs 2  International Rectifier Number of Outputs 2  MOSFET Power Drivers Number of Outputs 2  International Rectifier MOSFET Power Drivers Number of Outputs 2   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Power Drivers Number of Pins 8  International Rectifier MOSFET Power Drivers Number of Pins 8   Operating Voltage Range 10 to 20 V  International Rectifier Operating Voltage Range 10 to 20 V  MOSFET Power Drivers Operating Voltage Range 10 to 20 V  International Rectifier MOSFET Power Drivers Operating Voltage Range 10 to 20 V   Package Type SOIC  International Rectifier Package Type SOIC  MOSFET Power Drivers Package Type SOIC  International Rectifier MOSFET Power Drivers Package Type SOIC   Temperature, Operating, Maximum +125 °C  International Rectifier Temperature, Operating, Maximum +125 °C  MOSFET Power Drivers Temperature, Operating, Maximum +125 °C  International Rectifier MOSFET Power Drivers Temperature, Operating, Maximum +125 °C   Temperature, Operating, Minimum -40 °C  International Rectifier Temperature, Operating, Minimum -40 °C  MOSFET Power Drivers Temperature, Operating, Minimum -40 °C  International Rectifier MOSFET Power Drivers Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +125 °C  International Rectifier Temperature, Operating, Range -40 to +125 °C  MOSFET Power Drivers Temperature, Operating, Range -40 to +125 °C  International Rectifier MOSFET Power Drivers Temperature, Operating, Range -40 to +125 °C   Time Delay 220 (Turn-Off), 820 (Turn-On)  International Rectifier Time Delay 220 (Turn-Off), 820 (Turn-On)  MOSFET Power Drivers Time Delay 220 (Turn-Off), 820 (Turn-On)  International Rectifier MOSFET Power Drivers Time Delay 220 (Turn-Off), 820 (Turn-On)   Time, Rise Maximum of 170 ns  International Rectifier Time, Rise Maximum of 170 ns  MOSFET Power Drivers Time, Rise Maximum of 170 ns  International Rectifier MOSFET Power Drivers Time, Rise Maximum of 170 ns   Width 0.157" (4mm)  International Rectifier Width 0.157" (4mm)  MOSFET Power Drivers Width 0.157" (4mm)  International Rectifier MOSFET Power Drivers Width 0.157" (4mm)