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Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF

Advanced process technology

Ultra low on-resistance

150 °C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

Lead-free
Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature

Application	For automotive applications
Brand/Series	HEXFET Series
Capacitance, Input	3450 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	110 A
Dimensions	10.67 x 4.83 x 9.02 mm
Fall Time	67 ns (Typ.)
Gate Charge, Total	76 nC
Height	0.355" (9.02mm)
Length	0.42" (10.67mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to +175 °C (Max.)
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	170 W
Resistance, Drain to Source On	6.5 mΩ
Resistance, Thermal, Junction to Case	0.90 °C?W (Max.)
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Thermal Resistance, Junction to Ambient	62 °C⁄W
Time, Turn-Off Delay	45 ns
Time, Turn-On Delay	18 ns
Transconductance, Forward	71 S
Typical Gate Charge @ Vgs	76 nC @ 10 V
Voltage, Breakdown, Drain to Source	55 V
Voltage, Drain to Source	55 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	±20 V
Width	0.19" (4.83mm)
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• International Rectifier
  MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
  
  型号：IRF3205PBF
  仓库库存编号：70016950
  
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• International Rectifier
  MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.15Ohm; ID 18A; TO-220AB; PD 150W; VGS +/-20V
  
  型号：IRF640NPBF
  仓库库存编号：70016972
  
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• International Rectifier
  MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ohm; ID 110A; TO-247AC; PD 200W; VGS +/-20V
  
  型号：IRFP064NPBF
  仓库库存编号：70017032
  
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• ON Semiconductor
  MOSFET; N-Ch; VDSS 90VDC; RDS(ON) 1.8 Ohms; ID 0.5A; TO-92 (TO-226); PD 350mW; -55degc
  
  型号：BS170G
  仓库库存编号：70099793
  
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Application For automotive applications  International Rectifier Application For automotive applications  MOSFET Transistors Application For automotive applications  International Rectifier MOSFET Transistors Application For automotive applications   Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 3450 pF @ 25 V  International Rectifier Capacitance, Input 3450 pF @ 25 V  MOSFET Transistors Capacitance, Input 3450 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 3450 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain 110 A  International Rectifier Current, Drain 110 A  MOSFET Transistors Current, Drain 110 A  International Rectifier MOSFET Transistors Current, Drain 110 A   Dimensions 10.67 x 4.83 x 9.02 mm  International Rectifier Dimensions 10.67 x 4.83 x 9.02 mm  MOSFET Transistors Dimensions 10.67 x 4.83 x 9.02 mm  International Rectifier MOSFET Transistors Dimensions 10.67 x 4.83 x 9.02 mm   Fall Time 67 ns (Typ.)  International Rectifier Fall Time 67 ns (Typ.)  MOSFET Transistors Fall Time 67 ns (Typ.)  International Rectifier MOSFET Transistors Fall Time 67 ns (Typ.)   Gate Charge, Total 76 nC  International Rectifier Gate Charge, Total 76 nC  MOSFET Transistors Gate Charge, Total 76 nC  International Rectifier MOSFET Transistors Gate Charge, Total 76 nC   Height 0.355" (9.02mm)  International Rectifier Height 0.355" (9.02mm)  MOSFET Transistors Height 0.355" (9.02mm)  International Rectifier MOSFET Transistors Height 0.355" (9.02mm)   Length 0.42" (10.67mm)  International Rectifier Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  International Rectifier MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C (Max.)  International Rectifier Operating and Storage Temperature -55 to +175 °C (Max.)  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C (Max.)  International Rectifier MOSFET Transistors Operating and Storage Temperature -55 to +175 °C (Max.)   Package Type TO-220AB  International Rectifier Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  International Rectifier MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 170 W  International Rectifier Power Dissipation 170 W  MOSFET Transistors Power Dissipation 170 W  International Rectifier MOSFET Transistors Power Dissipation 170 W   Resistance, Drain to Source On 6.5 mΩ  International Rectifier Resistance, Drain to Source On 6.5 mΩ  MOSFET Transistors Resistance, Drain to Source On 6.5 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 6.5 mΩ   Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)  International Rectifier Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)  International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  International Rectifier Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  International Rectifier MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 45 ns  International Rectifier Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 18 ns  International Rectifier Time, Turn-On Delay 18 ns  MOSFET Transistors Time, Turn-On Delay 18 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 18 ns   Transconductance, Forward 71 S  International Rectifier Transconductance, Forward 71 S  MOSFET Transistors Transconductance, Forward 71 S  International Rectifier MOSFET Transistors Transconductance, Forward 71 S   Typical Gate Charge @ Vgs 76 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 76 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 76 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 76 nC @ 10 V   Voltage, Breakdown, Drain to Source 55 V  International Rectifier Voltage, Breakdown, Drain to Source 55 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V   Voltage, Drain to Source 55 V  International Rectifier Voltage, Drain to Source 55 V  MOSFET Transistors Voltage, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.83mm)  International Rectifier Width 0.19" (4.83mm)  MOSFET Transistors Width 0.19" (4.83mm)  International Rectifier MOSFET Transistors Width 0.19" (4.83mm)