Brand/Series |
HEXFET Series |
|
Capacitance, Input |
1200 pF @ -25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Single |
|
Current, Drain |
-22 A |
|
Dimensions |
10.54 x 4.69 x 15.24 mm |
|
Gate Charge, Total |
63 nC |
|
Height |
0.6" (15.24mm) |
|
Length |
0.414" (10.54mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220AB |
|
Polarization |
P-Channel |
|
Power Dissipation |
110 W |
|
Resistance, Drain to Source On |
0.06 Ω |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
39 ns |
|
Time, Turn-On Delay |
14 ns |
|
Transconductance, Forward |
8 S |
|
Typical Gate Charge @ Vgs |
Maximum of 63 nC @ -10 V |
|
Voltage, Breakdown, Drain to Source |
-55 V |
|
Voltage, Drain to Source |
-55 V |
|
Voltage, Forward, Diode |
-1.3 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.185" (4.69mm) |
|
关键词 |