Brand/Series |
HEXFET Series |
|
Capacitance, Input |
2940 pF @ -15 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Dual Drain |
|
Current, Drain |
-9 A |
|
Dimensions |
5.00 x 4.00 x 1.50 mm |
|
Gate Charge, Total |
42 nC |
|
Height |
0.059" (1.5mm) |
|
Length |
0.196" (5mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
SO-8 |
|
Polarization |
P-Channel |
|
Power Dissipation |
2 W |
|
Resistance, Drain to Source On |
0.026 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
62.5 °C/W |
|
Time, Turn-Off Delay |
170 ns |
|
Time, Turn-On Delay |
17 ns |
|
Transconductance, Forward |
19 S |
|
Typical Gate Charge @ Vgs |
42 nC @ -5 V |
|
Voltage, Breakdown, Drain to Source |
-20 V |
|
Voltage, Drain to Source |
-20 V |
|
Voltage, Forward, Diode |
-1.2 V |
|
Voltage, Gate to Source |
±12 V |
|
Width |
0.157" (4mm) |
|
关键词 |