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IRFB23N15DPBF
IRFB23N15DPBF -
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.09Ohm; ID 23A; TO-220AB; PD 136W; VGS +/-30V
声明:图片仅供参考,请以实物为准!
制造商:
International Rectifier
International Rectifier
制造商产品编号:
IRFB23N15DPBF
仓库库存编号:
70017261
技术数据表:
Datasheet
订购热线:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!
IRFB23N15DPBF产品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFB23N15DPBF产品信息
Brand/Series
HEXFET Series
Capacitance, Input
1200 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
23 A
Dimensions
10.54 x 4.69 x 15.24 mm
Gate Charge, Total
37 nC
Height
0.6" (15.24mm)
Length
0.414" (10.54mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
136 W
Resistance, Drain to Source On
0.09 Ω
Resistance, Thermal, Junction to Case
1.1 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
18 ns
Time, Turn-On Delay
10 ns
Transconductance, Forward
11 sec
Typical Gate Charge @ Vgs
37 nC @ 10 V
Voltage, Breakdown, Drain to Source
150 V
Voltage, Drain to Source
150 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±30 V
Width
0.185" (4.69mm)
关键词
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Lamp, Audio Visual, 21 Volt, 150 Watts, GX5.3 Base, CC-6 Filament Type
型号:
EKE
仓库库存编号:
70012986
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 185 Milliohms; ID 2.6A; SOT-223; PD 2.8W; -55de
型号:
IRFL4315PBF
仓库库存编号:
70017029
搜索
Microchip Technology Inc.
Microchip MCP2551-I/SN, CAN Transceiver1Mbit/s 1-channel ISO 11898, 8-Pin SOIC
型号:
MCP2551-I/SN
仓库库存编号:
70045403
搜索
Microchip Technology Inc.
MCU, 8-Bit, 4KW Flash, 368 RAM, 36 I/O, TQFP-44
型号:
PIC16F747-I/PT
仓库库存编号:
70046249
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SMC Corporation
Sensor, reed switch, direct mount, grommet connection, for CQ2/NCQ2/MX/NCQ8
型号:
D-A93
仓库库存编号:
70070875
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SMC Corporation
Socket for VZ valve, cut tape
型号:
DXT170-71-1
仓库库存编号:
70071335
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Bulgin
Adaptor Lead, PCB; PCB header straight; 5; 2.54 mm; 1.5 to 480 Mbs; 12.7 mm
型号:
14191
仓库库存编号:
70098946
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Hubbell Wiring Device-Kellems
Electrical Plug; 15 A; 125 VAC; 0.230 to 0.720 in.; Nylon; Nylon; Steel; Brass
型号:
HBL4720C
仓库库存编号:
70116463
搜索
L-com Connectivity
Coupler Shielded (8x8) Panel Mount Style Cat5e RJ45
型号:
ECF504-SC5E
仓库库存编号:
70126210
搜索
IRFB23N15DPBF相关搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1200 pF @ 25 V
International Rectifier Capacitance, Input 1200 pF @ 25 V
MOSFET Transistors Capacitance, Input 1200 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 1200 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 23 A
International Rectifier Current, Drain 23 A
MOSFET Transistors Current, Drain 23 A
International Rectifier MOSFET Transistors Current, Drain 23 A
Dimensions 10.54 x 4.69 x 15.24 mm
International Rectifier Dimensions 10.54 x 4.69 x 15.24 mm
MOSFET Transistors Dimensions 10.54 x 4.69 x 15.24 mm
International Rectifier MOSFET Transistors Dimensions 10.54 x 4.69 x 15.24 mm
Gate Charge, Total 37 nC
International Rectifier Gate Charge, Total 37 nC
MOSFET Transistors Gate Charge, Total 37 nC
International Rectifier MOSFET Transistors Gate Charge, Total 37 nC
Height 0.6" (15.24mm)
International Rectifier Height 0.6" (15.24mm)
MOSFET Transistors Height 0.6" (15.24mm)
International Rectifier MOSFET Transistors Height 0.6" (15.24mm)
Length 0.414" (10.54mm)
International Rectifier Length 0.414" (10.54mm)
MOSFET Transistors Length 0.414" (10.54mm)
International Rectifier MOSFET Transistors Length 0.414" (10.54mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-220AB
International Rectifier Package Type TO-220AB
MOSFET Transistors Package Type TO-220AB
International Rectifier MOSFET Transistors Package Type TO-220AB
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 136 W
International Rectifier Power Dissipation 136 W
MOSFET Transistors Power Dissipation 136 W
International Rectifier MOSFET Transistors Power Dissipation 136 W
Resistance, Drain to Source On 0.09 Ω
International Rectifier Resistance, Drain to Source On 0.09 Ω
MOSFET Transistors Resistance, Drain to Source On 0.09 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.09 Ω
Resistance, Thermal, Junction to Case 1.1 °C/W
International Rectifier Resistance, Thermal, Junction to Case 1.1 °C/W
MOSFET Transistors Resistance, Thermal, Junction to Case 1.1 °C/W
International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 1.1 °C/W
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 18 ns
International Rectifier Time, Turn-Off Delay 18 ns
MOSFET Transistors Time, Turn-Off Delay 18 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 18 ns
Time, Turn-On Delay 10 ns
International Rectifier Time, Turn-On Delay 10 ns
MOSFET Transistors Time, Turn-On Delay 10 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 10 ns
Transconductance, Forward 11 sec
International Rectifier Transconductance, Forward 11 sec
MOSFET Transistors Transconductance, Forward 11 sec
International Rectifier MOSFET Transistors Transconductance, Forward 11 sec
Typical Gate Charge @ Vgs 37 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs 37 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs 37 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 37 nC @ 10 V
Voltage, Breakdown, Drain to Source 150 V
International Rectifier Voltage, Breakdown, Drain to Source 150 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V
Voltage, Drain to Source 150 V
International Rectifier Voltage, Drain to Source 150 V
MOSFET Transistors Voltage, Drain to Source 150 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 150 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±30 V
International Rectifier Voltage, Gate to Source ±30 V
MOSFET Transistors Voltage, Gate to Source ±30 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±30 V
Width 0.185" (4.69mm)
International Rectifier Width 0.185" (4.69mm)
MOSFET Transistors Width 0.185" (4.69mm)
International Rectifier MOSFET Transistors Width 0.185" (4.69mm)
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sales@szcwdz.com
Q Q:
800152669
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m.szcwdz.com
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