"This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications." "Features:
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications
Low E pulse rating to reduce power dissipation in PDP applications
Low Qg for fast Response
High Repetitive Peak current capability for reliable operation
Short fall & rise times for fast switching
175 degC operating junction temperature for improved ruggedness
Repetitive Avalanche capability for robustness and reliability"