Brand/Series |
HEXFET Series |
|
Capacitance, Input |
3470 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
60 A |
|
Dimensions |
10.54 x 4.69 x 15.24 mm |
|
Gate Charge, Total |
95 nC |
|
Height |
0.6" (15.24mm) |
|
Length |
0.414" (10.54mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220AB |
|
Polarization |
N-Channel |
|
Power Dissipation |
330 W |
|
Resistance, Drain to Source On |
0.032 Ω |
|
Resistance, Thermal, Junction to Case |
0.45 °C/W |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
28 ns |
|
Time, Turn-On Delay |
18 ns |
|
Transconductance, Forward |
22 sec |
|
Typical Gate Charge @ Vgs |
95 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
150 V |
|
Voltage, Drain to Source |
150 V |
|
Voltage, Forward, Diode |
1.3 V |
|
Voltage, Gate to Source |
± 16 V |
|
Width |
0.185" (4.69mm) |
|
关键词 |