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IR's FastIRFET™ family offers benchmark performance with best in-class R*Q figure of merit. The family features optimized packaging tailored to application requirements for size reduction. Ideal for high frequency applications requiring low switching loss or high light load efficiency. Excellent choices for DC-DC and POL cutting edge applications, such as base station power amplifiers, high performance DC-DC bricks, Platinum+ power supplies and high end battery driven motors.

Features:

Control and synchronous MOSFETs in one package

Low charge control MOSFET (10 nC typical)

Low RDSON synchronous MOSFET (<1.45 mΩ)

Intrinsic Schottky Diode with Low Forward Voltage on Q2

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Brand/Series	HEXFET Series
Capacitance, Input	nC
Channel Mode	Enhancement
Channel Type	N
Configuration	Dual
Current, Drain	64/145 A
Dimensions	5 x 6 x 0.9 mm
Height	0.035" (0.9mm)
Length	0.236" (6mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	Dual PQFN
Power Dissipation	31/50 W
Resistance, Drain to Source On	4.6/1.45 mΩ
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	13/26 ns
Time, Turn-On Delay	10/16 ns
Transconductance, Forward	131/164 S
Typical Gate Charge @ Vgs	10/31
Voltage, Drain to Source	25 V
Voltage, Forward, Diode	1/0.75 V
Voltage, Gate to Source	±20 V
Width	0.197" (5mm)
关键词

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input nC  International Rectifier Capacitance, Input nC  MOSFET Transistors Capacitance, Input nC  International Rectifier MOSFET Transistors Capacitance, Input nC   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Dual  International Rectifier Configuration Dual  MOSFET Transistors Configuration Dual  International Rectifier MOSFET Transistors Configuration Dual   Current, Drain 64/145 A  International Rectifier Current, Drain 64/145 A  MOSFET Transistors Current, Drain 64/145 A  International Rectifier MOSFET Transistors Current, Drain 64/145 A   Dimensions 5 x 6 x 0.9 mm  International Rectifier Dimensions 5 x 6 x 0.9 mm  MOSFET Transistors Dimensions 5 x 6 x 0.9 mm  International Rectifier MOSFET Transistors Dimensions 5 x 6 x 0.9 mm   Height 0.035" (0.9mm)  International Rectifier Height 0.035" (0.9mm)  MOSFET Transistors Height 0.035" (0.9mm)  International Rectifier MOSFET Transistors Height 0.035" (0.9mm)   Length 0.236" (6mm)  International Rectifier Length 0.236" (6mm)  MOSFET Transistors Length 0.236" (6mm)  International Rectifier MOSFET Transistors Length 0.236" (6mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  International Rectifier Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  International Rectifier MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Transistors Number of Pins 8  International Rectifier MOSFET Transistors Number of Pins 8   Package Type Dual PQFN  International Rectifier Package Type Dual PQFN  MOSFET Transistors Package Type Dual PQFN  International Rectifier MOSFET Transistors Package Type Dual PQFN   Power Dissipation 31/50 W  International Rectifier Power Dissipation 31/50 W  MOSFET Transistors Power Dissipation 31/50 W  International Rectifier MOSFET Transistors Power Dissipation 31/50 W   Resistance, Drain to Source On 4.6/1.45 mΩ  International Rectifier Resistance, Drain to Source On 4.6/1.45 mΩ  MOSFET Transistors Resistance, Drain to Source On 4.6/1.45 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 4.6/1.45 mΩ   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 13/26 ns  International Rectifier Time, Turn-Off Delay 13/26 ns  MOSFET Transistors Time, Turn-Off Delay 13/26 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 13/26 ns   Time, Turn-On Delay 10/16 ns  International Rectifier Time, Turn-On Delay 10/16 ns  MOSFET Transistors Time, Turn-On Delay 10/16 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 10/16 ns   Transconductance, Forward 131/164 S  International Rectifier Transconductance, Forward 131/164 S  MOSFET Transistors Transconductance, Forward 131/164 S  International Rectifier MOSFET Transistors Transconductance, Forward 131/164 S   Typical Gate Charge @ Vgs 10/31  International Rectifier Typical Gate Charge @ Vgs 10/31  MOSFET Transistors Typical Gate Charge @ Vgs 10/31  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10/31   Voltage, Drain to Source 25 V  International Rectifier Voltage, Drain to Source 25 V  MOSFET Transistors Voltage, Drain to Source 25 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 25 V   Voltage, Forward, Diode 1/0.75 V  International Rectifier Voltage, Forward, Diode 1/0.75 V  MOSFET Transistors Voltage, Forward, Diode 1/0.75 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1/0.75 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.197" (5mm)  International Rectifier Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  International Rectifier MOSFET Transistors Width 0.197" (5mm)