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N-Channel Power MOSFET 80A to 99A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Brand/Series	HEXFET Series
Capacitance, Input	6040 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	94 A
Dimensions	15.87 x 5.31 x 20.70 mm
Gate Charge, Total	180 nC
Height	0.815" (20.7mm)
Length	0.625" <5/8> (15.875mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-247AC
Polarization	N-Channel
Power Dissipation	580 W
Resistance, Drain to Source On	0.023 Ω
Resistance, Thermal, Junction to Case	0.26 °C/W
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Time, Turn-Off Delay	43 ns
Time, Turn-On Delay	23 ns
Transconductance, Forward	39 S
Typical Gate Charge @ Vgs	180 nC @ 10 V
Voltage, Breakdown, Drain to Source	200 V
Voltage, Drain to Source	200 V
Voltage, Forward, Diode	1.5 V
Voltage, Gate to Source	± 30 V
Width	0.209" (5.31mm)
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• International Rectifier
  MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free
  
  型号：IRFP4668PBF
  仓库库存编号：70017926
  
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• Volex Power Cords
  Y-Cord; 10 A; 6 Ft.:2 Ft. Legs; 1250 W; 125 V; Black; 60 degC
  
  型号：17272A 10 B1
  仓库库存编号：70116067
  
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• Panasonic
  Battery; Non-Rechargeable; Coin/Button; Lithium Poly-Carbon Monofluoride; 3VDC; 48Ah
  
  型号：BR1225
  仓库库存编号：70196996
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 700V IC=4A TO-220 CASE HIGH SPEED SWITCH
  
  型号：NTE51
  仓库库存编号：70215716
  
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• Solid State Manufacturing
  Transistor; PNP; 100V; 1A; TO-220
  
  型号：TIP32C
  仓库库存编号：70348182
  
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Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 6040 pF @ 25 V  International Rectifier Capacitance, Input 6040 pF @ 25 V  MOSFET Transistors Capacitance, Input 6040 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 6040 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain 94 A  International Rectifier Current, Drain 94 A  MOSFET Transistors Current, Drain 94 A  International Rectifier MOSFET Transistors Current, Drain 94 A   Dimensions 15.87 x 5.31 x 20.70 mm  International Rectifier Dimensions 15.87 x 5.31 x 20.70 mm  MOSFET Transistors Dimensions 15.87 x 5.31 x 20.70 mm  International Rectifier MOSFET Transistors Dimensions 15.87 x 5.31 x 20.70 mm   Gate Charge, Total 180 nC  International Rectifier Gate Charge, Total 180 nC  MOSFET Transistors Gate Charge, Total 180 nC  International Rectifier MOSFET Transistors Gate Charge, Total 180 nC   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  MOSFET Transistors Height 0.815" (20.7mm)  International Rectifier MOSFET Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  MOSFET Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier MOSFET Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  MOSFET Transistors Package Type TO-247AC  International Rectifier MOSFET Transistors Package Type TO-247AC   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 580 W  International Rectifier Power Dissipation 580 W  MOSFET Transistors Power Dissipation 580 W  International Rectifier MOSFET Transistors Power Dissipation 580 W   Resistance, Drain to Source On 0.023 Ω  International Rectifier Resistance, Drain to Source On 0.023 Ω  MOSFET Transistors Resistance, Drain to Source On 0.023 Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.023 Ω   Resistance, Thermal, Junction to Case 0.26 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.26 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.26 °C/W  International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.26 °C/W   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 43 ns  International Rectifier Time, Turn-Off Delay 43 ns  MOSFET Transistors Time, Turn-Off Delay 43 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 43 ns   Time, Turn-On Delay 23 ns  International Rectifier Time, Turn-On Delay 23 ns  MOSFET Transistors Time, Turn-On Delay 23 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 23 ns   Transconductance, Forward 39 S  International Rectifier Transconductance, Forward 39 S  MOSFET Transistors Transconductance, Forward 39 S  International Rectifier MOSFET Transistors Transconductance, Forward 39 S   Typical Gate Charge @ Vgs 180 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 180 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 180 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 180 nC @ 10 V   Voltage, Breakdown, Drain to Source 200 V  International Rectifier Voltage, Breakdown, Drain to Source 200 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V   Voltage, Drain to Source 200 V  International Rectifier Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Forward, Diode 1.5 V  International Rectifier Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ± 30 V  International Rectifier Voltage, Gate to Source ± 30 V  MOSFET Transistors Voltage, Gate to Source ± 30 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ± 30 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  MOSFET Transistors Width 0.209" (5.31mm)  International Rectifier MOSFET Transistors Width 0.209" (5.31mm)