Brand/Series |
HEXFET Series |
|
Capacitance, Input |
2930 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
56 A |
|
Dimensions |
6.22 x 6.22 x 2.26 mm |
|
Gate Charge, Total |
69 nC |
|
Height |
0.089" (2.26mm) |
|
Length |
0.244" (6.22mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
DPAK |
|
Polarization |
N-Channel |
|
Power Dissipation |
140 W |
|
Resistance, Drain to Source On |
18 mΩ |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
53 ns |
|
Time, Turn-On Delay |
14 ns |
|
Transconductance, Forward |
39 sec |
|
Typical Gate Charge @ Vgs |
69 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
100 V |
|
Voltage, Drain to Source |
100 V |
|
Voltage, Forward, Diode |
1.3 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.245" (6.22mm) |
|
关键词 |