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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features:

Ultra Low On-Resistance

Surface Mount (IRFR3910)

Straight Lead (IRFU3910)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

Brand/Series	HEXFET Series
Capacitance, Input	640 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Dual Drain
Current, Drain	16 A
Dimensions	6.73 x 6.22 x 2.39 mm
Gate Charge, Total	44 nC
Height	0.094" (2.39mm)
Length	0.264" (6.73mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Package Type	DPAK
Polarization	N-Channel
Power Dissipation	79 W
Resistance, Drain to Source On	0.115 Ω
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Time, Turn-Off Delay	37 ns
Time, Turn-On Delay	6.4 ns
Transconductance, Forward	6.4 S
Typical Gate Charge @ Vgs	Maximum of 44 nC @ 10 V
Voltage, Breakdown, Drain to Source	100 V
Voltage, Drain to Source	100 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	±20 V
Width	0.245" (6.22mm)
关键词

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 640 pF @ 25 V  International Rectifier Capacitance, Input 640 pF @ 25 V  MOSFET Transistors Capacitance, Input 640 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 640 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain 16 A  International Rectifier Current, Drain 16 A  MOSFET Transistors Current, Drain 16 A  International Rectifier MOSFET Transistors Current, Drain 16 A   Dimensions 6.73 x 6.22 x 2.39 mm  International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm  International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm   Gate Charge, Total 44 nC  International Rectifier Gate Charge, Total 44 nC  MOSFET Transistors Gate Charge, Total 44 nC  International Rectifier MOSFET Transistors Gate Charge, Total 44 nC   Height 0.094" (2.39mm)  International Rectifier Height 0.094" (2.39mm)  MOSFET Transistors Height 0.094" (2.39mm)  International Rectifier MOSFET Transistors Height 0.094" (2.39mm)   Length 0.264" (6.73mm)  International Rectifier Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  International Rectifier MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type DPAK  International Rectifier Package Type DPAK  MOSFET Transistors Package Type DPAK  International Rectifier MOSFET Transistors Package Type DPAK   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 79 W  International Rectifier Power Dissipation 79 W  MOSFET Transistors Power Dissipation 79 W  International Rectifier MOSFET Transistors Power Dissipation 79 W   Resistance, Drain to Source On 0.115 Ω  International Rectifier Resistance, Drain to Source On 0.115 Ω  MOSFET Transistors Resistance, Drain to Source On 0.115 Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.115 Ω   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 37 ns  International Rectifier Time, Turn-Off Delay 37 ns  MOSFET Transistors Time, Turn-Off Delay 37 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 37 ns   Time, Turn-On Delay 6.4 ns  International Rectifier Time, Turn-On Delay 6.4 ns  MOSFET Transistors Time, Turn-On Delay 6.4 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 6.4 ns   Transconductance, Forward 6.4 S  International Rectifier Transconductance, Forward 6.4 S  MOSFET Transistors Transconductance, Forward 6.4 S  International Rectifier MOSFET Transistors Transconductance, Forward 6.4 S   Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  International Rectifier Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  International Rectifier Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.245" (6.22mm)  International Rectifier Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  International Rectifier MOSFET Transistors Width 0.245" (6.22mm)