| Brand/Series |
HEXFET Series |
|
| Capacitance, Input |
1710 pF @ 50 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Dual Drain |
|
| Current, Drain |
24 A |
|
| Dimensions |
10.41 x 6.73 x 2.39 mm |
|
| Height |
0.094" (2.39mm) |
|
| Length |
0.409" (10.41mm) |
|
| Mounting Type |
Surface Mount |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Package Type |
DPAK |
|
| Power Dissipation |
144 W |
|
| Resistance, Drain to Source On |
78 mΩ |
|
| Temperature, Operating, Maximum |
+175 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +175 °C |
|
| Time, Turn-Off Delay |
25.4 ns |
|
| Time, Turn-On Delay |
13.4 ns |
|
| Transconductance, Forward |
37 S |
|
| Typical Gate Charge @ Vgs |
25 nC @ 10 V |
|
| Voltage, Drain to Source |
200 V |
|
| Voltage, Forward, Diode |
1.3 V |
|
| Voltage, Gate to Source |
±20 V |
|
| Width |
0.265" (6.73mm) |
|
| 关键词 |