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IRFS3806TRLPBF
IRFS3806TRLPBF -
IRFS3806TRLPBF N-channel MOSFET Transistor, 43 A, 60 V, 3-Pin D2PAK
声明:图片仅供参考,请以实物为准!
制造商:
International Rectifier
International Rectifier
制造商产品编号:
IRFS3806TRLPBF
仓库库存编号:
70019027
技术数据表:
Datasheet
订购热线:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!
IRFS3806TRLPBF产品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFS3806TRLPBF产品信息
Brand/Series
HEXFET Series
Capacitance, Input
1150 pF @ 50 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Drain
Current, Drain
43 A
Dimensions
10.67 x 9.65 x 4.83 mm
Height
0.19" (4.83mm)
Length
0.42" (10.67mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
D2PAK
Power Dissipation
71 W
Resistance, Drain to Source On
15.8 mΩ
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
49 ns
Time, Turn-On Delay
6.3 ns
Transconductance, Forward
41 S
Typical Gate Charge @ Vgs
28.3 nC @ 10 V
Voltage, Drain to Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±20 V
Width
0.38" (9.65mm)
关键词
IRFS3806TRLPBF客户还搜索了
参考图片
制造商 / 说明 / 型号 / 仓库库存编号
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操作
WECO
Conn; Term Blk; Plug; 5; 5 mm; 26-12 AWG; 15 A; 300 V
型号:
120-A-111/05
仓库库存编号:
70212030
搜索
WECO
Conn; TermBlk; PCB; Header; SnglLvl; 90DegAngl; Sldr; 5Pole; 5mmPitch; 12Series
型号:
120-M-211/05
仓库库存编号:
70212069
搜索
WECO
Conn; TermBlk; PCB; Header; SnglLvl; ClosedEnd; Sldr; 5Pole; 5mmPitch; 12Series
型号:
120-M-221/05
仓库库存编号:
70212092
搜索
WECO
Conn; Term Blk; Plug; Plug-In Screw; 5; 5 mm; 26-12 AWG; 15 A; 300 V
型号:
120-D-121/05
仓库库存编号:
70212411
搜索
IRFS3806TRLPBF相关搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1150 pF @ 50 V
International Rectifier Capacitance, Input 1150 pF @ 50 V
MOSFET Transistors Capacitance, Input 1150 pF @ 50 V
International Rectifier MOSFET Transistors Capacitance, Input 1150 pF @ 50 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain 43 A
International Rectifier Current, Drain 43 A
MOSFET Transistors Current, Drain 43 A
International Rectifier MOSFET Transistors Current, Drain 43 A
Dimensions 10.67 x 9.65 x 4.83 mm
International Rectifier Dimensions 10.67 x 9.65 x 4.83 mm
MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm
International Rectifier MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm
Height 0.19" (4.83mm)
International Rectifier Height 0.19" (4.83mm)
MOSFET Transistors Height 0.19" (4.83mm)
International Rectifier MOSFET Transistors Height 0.19" (4.83mm)
Length 0.42" (10.67mm)
International Rectifier Length 0.42" (10.67mm)
MOSFET Transistors Length 0.42" (10.67mm)
International Rectifier MOSFET Transistors Length 0.42" (10.67mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type D2PAK
International Rectifier Package Type D2PAK
MOSFET Transistors Package Type D2PAK
International Rectifier MOSFET Transistors Package Type D2PAK
Power Dissipation 71 W
International Rectifier Power Dissipation 71 W
MOSFET Transistors Power Dissipation 71 W
International Rectifier MOSFET Transistors Power Dissipation 71 W
Resistance, Drain to Source On 15.8 mΩ
International Rectifier Resistance, Drain to Source On 15.8 mΩ
MOSFET Transistors Resistance, Drain to Source On 15.8 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 15.8 mΩ
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 49 ns
International Rectifier Time, Turn-Off Delay 49 ns
MOSFET Transistors Time, Turn-Off Delay 49 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 49 ns
Time, Turn-On Delay 6.3 ns
International Rectifier Time, Turn-On Delay 6.3 ns
MOSFET Transistors Time, Turn-On Delay 6.3 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 6.3 ns
Transconductance, Forward 41 S
International Rectifier Transconductance, Forward 41 S
MOSFET Transistors Transconductance, Forward 41 S
International Rectifier MOSFET Transistors Transconductance, Forward 41 S
Typical Gate Charge @ Vgs 28.3 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs 28.3 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs 28.3 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 28.3 nC @ 10 V
Voltage, Drain to Source 60 V
International Rectifier Voltage, Drain to Source 60 V
MOSFET Transistors Voltage, Drain to Source 60 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 60 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.38" (9.65mm)
International Rectifier Width 0.38" (9.65mm)
MOSFET Transistors Width 0.38" (9.65mm)
International Rectifier MOSFET Transistors Width 0.38" (9.65mm)
邮箱:
sales@szcwdz.com
Q Q:
800152669
手机网站:
m.szcwdz.com
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