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IRG4BC30KDPBF - 

600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-220AB PACKAGE

International Rectifier IRG4BC30KDPBF
声明：图片仅供参考，请以实物为准！
制造商产品编号：
IRG4BC30KDPBF
仓库库存编号：
70017507
技术数据表：
View IRG4BC30KDPBF Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

IRG4BC30KDPBF产品概述

Features:
  • High short circuit Rating Optimized for Motor control tSC = 10 μs, @ 360 V, VCE (start), TJ = 125°C, VGE = 15 V
  • Combines Low Conduction Losses with High Switching Speed
  • Tighter Parameter Distribution and Higher Efficiency than Previous Generations
  • IGBT Co-Packaged with HEXFRED™ Ultrfast, Ultrasoft Recovery Antiparallel Diodes
  • Lead-Free

    • IRG4BC30KDPBF产品信息

      Capacitance, Gate  920 pF  
      Channel Type  N  
      Configuration  Single  
      Current, Collector  28 A  
      Current, Continuous Collector  28 A  
      Dimensions  10.54 x 4.69 x 8.77 mm  
      Energy Rating  1.18 mJ  
      Height  0.345" (8.77mm)  
      Length  0.414" (10.54mm)  
      Mounting Type  Through Hole  
      Number of Pins  3  
      Package Type  TO-220AB  
      Polarity  N-Channel  
      Power Dissipation  100 W  
      Resistance, Thermal, Junction to Case  1.2 °C/W  
      Speed, Switching  8 to 25 kHz  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Transistor Type  NPN  
      Type  Ultrafast  
      Voltage, Collector to Emitter  600 V  
      Voltage, Collector to Emitter Shorted  600 V  
      Voltage, Gate to Emitter  ±20 V  
      Width  0.185" (4.69mm)  
    关键词         

    IRG4BC30KDPBF相关搜索

    Capacitance, Gate 920 pF  International Rectifier Capacitance, Gate 920 pF  IGBT Transistors Capacitance, Gate 920 pF  International Rectifier IGBT Transistors Capacitance, Gate 920 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 28 A  International Rectifier Current, Collector 28 A  IGBT Transistors Current, Collector 28 A  International Rectifier IGBT Transistors Current, Collector 28 A   Current, Continuous Collector 28 A  International Rectifier Current, Continuous Collector 28 A  IGBT Transistors Current, Continuous Collector 28 A  International Rectifier IGBT Transistors Current, Continuous Collector 28 A   Dimensions 10.54 x 4.69 x 8.77 mm  International Rectifier Dimensions 10.54 x 4.69 x 8.77 mm  IGBT Transistors Dimensions 10.54 x 4.69 x 8.77 mm  International Rectifier IGBT Transistors Dimensions 10.54 x 4.69 x 8.77 mm   Energy Rating 1.18 mJ  International Rectifier Energy Rating 1.18 mJ  IGBT Transistors Energy Rating 1.18 mJ  International Rectifier IGBT Transistors Energy Rating 1.18 mJ   Height 0.345" (8.77mm)  International Rectifier Height 0.345" (8.77mm)  IGBT Transistors Height 0.345" (8.77mm)  International Rectifier IGBT Transistors Height 0.345" (8.77mm)   Length 0.414" (10.54mm)  International Rectifier Length 0.414" (10.54mm)  IGBT Transistors Length 0.414" (10.54mm)  International Rectifier IGBT Transistors Length 0.414" (10.54mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  IGBT Transistors Package Type TO-220AB  International Rectifier IGBT Transistors Package Type TO-220AB   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 100 W  International Rectifier Power Dissipation 100 W  IGBT Transistors Power Dissipation 100 W  International Rectifier IGBT Transistors Power Dissipation 100 W   Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier Resistance, Thermal, Junction to Case 1.2 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W   Speed, Switching 8 to 25 kHz  International Rectifier Speed, Switching 8 to 25 kHz  IGBT Transistors Speed, Switching 8 to 25 kHz  International Rectifier IGBT Transistors Speed, Switching 8 to 25 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.185" (4.69mm)  International Rectifier Width 0.185" (4.69mm)  IGBT Transistors Width 0.185" (4.69mm)  International Rectifier IGBT Transistors Width 0.185" (4.69mm)  
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