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Single IGBT up to 20A, Infineon
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs

Capacitance, Gate	1900 pF
Channel Type	N
Configuration	Dual
Current, Collector	40 A
Current, Continuous Collector	40 A
Dimensions	15.87 x 5.31 x 20.70 mm
Energy Rating	160 mJ
Height	0.815" (20.7mm)
Length	0.625" <5/8> (15.875mm)
Mounting Type	Through Hole
Number of Pins	3
Package Type	TO-247AC
Polarity	N-Channel
Power Dissipation	160 W
Resistance, Thermal, Junction to Case	0.77 °C/W
Speed, Switching	30-150 Khz
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Type	Warp
Voltage, Collector to Emitter	2.5 V
Voltage, Collector to Emitter Shorted	600 V
Voltage, Gate to Emitter	±20 V
Width	0.209" (5.31mm)
关键词

Capacitance, Gate 1900 pF  International Rectifier Capacitance, Gate 1900 pF  IGBT Transistors Capacitance, Gate 1900 pF  International Rectifier IGBT Transistors Capacitance, Gate 1900 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Dual  International Rectifier Configuration Dual  IGBT Transistors Configuration Dual  International Rectifier IGBT Transistors Configuration Dual   Current, Collector 40 A  International Rectifier Current, Collector 40 A  IGBT Transistors Current, Collector 40 A  International Rectifier IGBT Transistors Current, Collector 40 A   Current, Continuous Collector 40 A  International Rectifier Current, Continuous Collector 40 A  IGBT Transistors Current, Continuous Collector 40 A  International Rectifier IGBT Transistors Current, Continuous Collector 40 A   Dimensions 15.87 x 5.31 x 20.70 mm  International Rectifier Dimensions 15.87 x 5.31 x 20.70 mm  IGBT Transistors Dimensions 15.87 x 5.31 x 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 x 5.31 x 20.70 mm   Energy Rating 160 mJ  International Rectifier Energy Rating 160 mJ  IGBT Transistors Energy Rating 160 mJ  International Rectifier IGBT Transistors Energy Rating 160 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 160 W  International Rectifier Power Dissipation 160 W  IGBT Transistors Power Dissipation 160 W  International Rectifier IGBT Transistors Power Dissipation 160 W   Resistance, Thermal, Junction to Case 0.77 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.77 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.77 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.77 °C/W   Speed, Switching 30-150 Khz  International Rectifier Speed, Switching 30-150 Khz  IGBT Transistors Speed, Switching 30-150 Khz  International Rectifier IGBT Transistors Speed, Switching 30-150 Khz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Type Warp  International Rectifier Type Warp  IGBT Transistors Type Warp  International Rectifier IGBT Transistors Type Warp   Voltage, Collector to Emitter 2.5 V  International Rectifier Voltage, Collector to Emitter 2.5 V  IGBT Transistors Voltage, Collector to Emitter 2.5 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 2.5 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)