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IRG4PC50FDPBF - 

IGBT, with Ultrafast Soft Recovery Diode, 500 V, 39 A, TO-247AC

International Rectifier IRG4PC50FDPBF
声明：图片仅供参考，请以实物为准！
制造商产品编号：
IRG4PC50FDPBF
仓库库存编号：
70017073
技术数据表：
View IRG4PC50FDPBF Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

IRG4PC50FDPBF产品概述

Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IRG4PC50FDPBF产品信息

  Capacitance, Gate  4100 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  70 A  
  Current, Continuous Collector  70 A  
  Dimensions  15.87 X 5.31 X 20.70 mm  
  Energy Rating  3.9 mJ  
  Height  0.815" (20.7mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  200 W  
  Resistance, Thermal, Junction to Case  0.64 °C/W  
  Speed, Switching  1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Type  Ultrafast  
  Voltage, Collector to Emitter  600 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.31mm)  
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Capacitance, Gate 4100 pF  International Rectifier Capacitance, Gate 4100 pF  IGBT Transistors Capacitance, Gate 4100 pF  International Rectifier IGBT Transistors Capacitance, Gate 4100 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 70 A  International Rectifier Current, Collector 70 A  IGBT Transistors Current, Collector 70 A  International Rectifier IGBT Transistors Current, Collector 70 A   Current, Continuous Collector 70 A  International Rectifier Current, Continuous Collector 70 A  IGBT Transistors Current, Continuous Collector 70 A  International Rectifier IGBT Transistors Current, Continuous Collector 70 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 3.9 mJ  International Rectifier Energy Rating 3.9 mJ  IGBT Transistors Energy Rating 3.9 mJ  International Rectifier IGBT Transistors Energy Rating 3.9 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  IGBT Transistors Power Dissipation 200 W  International Rectifier IGBT Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  International Rectifier Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  IGBT Transistors Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  International Rectifier IGBT Transistors Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)  
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