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IRG4PC50UPBF
IRG4PC50UPBF -
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
声明:图片仅供参考,请以实物为准!
制造商:
International Rectifier
International Rectifier
制造商产品编号:
IRG4PC50UPBF
仓库库存编号:
70017076
技术数据表:
Datasheet
订购热线:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!
IRG4PC50UPBF产品概述
Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's
IRG4PC50UPBF产品信息
Capacitance, Gate
4000 pF
Channel Type
N
Configuration
Single
Current, Collector
55 A
Current, Continuous Collector
55 A
Dimensions
15.87 X 5.31 X 20.70 mm
Energy Rating
20 mJ
Height
0.815" (20.7mm)
Length
0.625" <5/8> (15.875mm)
Mounting Type
Through Hole
Number of Pins
3
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction to Case
0.64 °C/W
Speed, Switching
8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Transistor Type
NPN
Type
Ultrafast
Voltage, Collector to Emitter
600 V
Voltage, Collector to Emitter Shorted
600 V
Voltage, Gate to Emitter
±20 V
Width
0.209" (5.31mm)
关键词
IRG4PC50UPBF相关搜索
Capacitance, Gate 4000 pF
International Rectifier Capacitance, Gate 4000 pF
IGBT Transistors Capacitance, Gate 4000 pF
International Rectifier IGBT Transistors Capacitance, Gate 4000 pF
Channel Type N
International Rectifier Channel Type N
IGBT Transistors Channel Type N
International Rectifier IGBT Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
IGBT Transistors Configuration Single
International Rectifier IGBT Transistors Configuration Single
Current, Collector 55 A
International Rectifier Current, Collector 55 A
IGBT Transistors Current, Collector 55 A
International Rectifier IGBT Transistors Current, Collector 55 A
Current, Continuous Collector 55 A
International Rectifier Current, Continuous Collector 55 A
IGBT Transistors Current, Continuous Collector 55 A
International Rectifier IGBT Transistors Current, Continuous Collector 55 A
Dimensions 15.87 X 5.31 X 20.70 mm
International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm
IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm
International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm
Energy Rating 20 mJ
International Rectifier Energy Rating 20 mJ
IGBT Transistors Energy Rating 20 mJ
International Rectifier IGBT Transistors Energy Rating 20 mJ
Height 0.815" (20.7mm)
International Rectifier Height 0.815" (20.7mm)
IGBT Transistors Height 0.815" (20.7mm)
International Rectifier IGBT Transistors Height 0.815" (20.7mm)
Length 0.625" <5/8> (15.875mm)
International Rectifier Length 0.625" <5/8> (15.875mm)
IGBT Transistors Length 0.625" <5/8> (15.875mm)
International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
IGBT Transistors Mounting Type Through Hole
International Rectifier IGBT Transistors Mounting Type Through Hole
Number of Pins 3
International Rectifier Number of Pins 3
IGBT Transistors Number of Pins 3
International Rectifier IGBT Transistors Number of Pins 3
Package Type TO-247AC
International Rectifier Package Type TO-247AC
IGBT Transistors Package Type TO-247AC
International Rectifier IGBT Transistors Package Type TO-247AC
Polarity N-Channel
International Rectifier Polarity N-Channel
IGBT Transistors Polarity N-Channel
International Rectifier IGBT Transistors Polarity N-Channel
Power Dissipation 200 W
International Rectifier Power Dissipation 200 W
IGBT Transistors Power Dissipation 200 W
International Rectifier IGBT Transistors Power Dissipation 200 W
Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W
IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
International Rectifier Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
International Rectifier IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
IGBT Transistors Temperature, Operating, Maximum +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
IGBT Transistors Temperature, Operating, Minimum -55 °C
International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
IGBT Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C
Transistor Type NPN
International Rectifier Transistor Type NPN
IGBT Transistors Transistor Type NPN
International Rectifier IGBT Transistors Transistor Type NPN
Type Ultrafast
International Rectifier Type Ultrafast
IGBT Transistors Type Ultrafast
International Rectifier IGBT Transistors Type Ultrafast
Voltage, Collector to Emitter 600 V
International Rectifier Voltage, Collector to Emitter 600 V
IGBT Transistors Voltage, Collector to Emitter 600 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V
Voltage, Collector to Emitter Shorted 600 V
International Rectifier Voltage, Collector to Emitter Shorted 600 V
IGBT Transistors Voltage, Collector to Emitter Shorted 600 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V
Voltage, Gate to Emitter ±20 V
International Rectifier Voltage, Gate to Emitter ±20 V
IGBT Transistors Voltage, Gate to Emitter ±20 V
International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V
Width 0.209" (5.31mm)
International Rectifier Width 0.209" (5.31mm)
IGBT Transistors Width 0.209" (5.31mm)
International Rectifier IGBT Transistors Width 0.209" (5.31mm)
邮箱:
sales@szcwdz.com
Q Q:
800152669
手机网站:
m.szcwdz.com
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