关于我们 | 联系我们

库存查询

Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's

Capacitance, Gate	4000 pF
Channel Type	N
Configuration	Single
Current, Collector	55 A
Current, Continuous Collector	55 A
Dimensions	15.87 X 5.31 X 20.70 mm
Energy Rating	20 mJ
Height	0.815" (20.7mm)
Length	0.625" <5/8> (15.875mm)
Mounting Type	Through Hole
Number of Pins	3
Package Type	TO-247AC
Polarity	N-Channel
Power Dissipation	200 W
Resistance, Thermal, Junction to Case	0.64 °C/W
Speed, Switching	8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Type	NPN
Type	Ultrafast
Voltage, Collector to Emitter	600 V
Voltage, Collector to Emitter Shorted	600 V
Voltage, Gate to Emitter	±20 V
Width	0.209" (5.31mm)
关键词

Capacitance, Gate 4000 pF  International Rectifier Capacitance, Gate 4000 pF  IGBT Transistors Capacitance, Gate 4000 pF  International Rectifier IGBT Transistors Capacitance, Gate 4000 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 55 A  International Rectifier Current, Collector 55 A  IGBT Transistors Current, Collector 55 A  International Rectifier IGBT Transistors Current, Collector 55 A   Current, Continuous Collector 55 A  International Rectifier Current, Continuous Collector 55 A  IGBT Transistors Current, Continuous Collector 55 A  International Rectifier IGBT Transistors Current, Continuous Collector 55 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 20 mJ  International Rectifier Energy Rating 20 mJ  IGBT Transistors Energy Rating 20 mJ  International Rectifier IGBT Transistors Energy Rating 20 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  IGBT Transistors Power Dissipation 200 W  International Rectifier IGBT Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)