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IRG4PC50WPBF - 

600V WARP 60-150 KHZ DISCRETE IGBT; TO-247AC PACKAGE

International Rectifier IRG4PC50WPBF
声明：图片仅供参考，请以实物为准！
制造商产品编号：
IRG4PC50WPBF
仓库库存编号：
70017498
技术数据表：
View IRG4PC50WPBF Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

IRG4PC50WPBF产品概述

Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's

IRG4PC50WPBF产品信息

  Capacitance, Gate  3700 pF  
  Channel Type  N  
  Configuration  Dual  
  Current, Collector  55 A  
  Current, Continuous Collector  55 A  
  Dimensions  15.90 x 5.30 x 20.30 mm  
  Energy Rating  170 mJ  
  Height  0.799" (20.3mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  200 W  
  Resistance, Thermal, Junction to Case  0.64 °C/W  
  Speed, Switching  150 kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Warp  
  Voltage, Collector to Emitter  2.3 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.3mm)  
关键词         

IRG4PC50WPBF相关搜索

Capacitance, Gate 3700 pF  International Rectifier Capacitance, Gate 3700 pF  IGBT Transistors Capacitance, Gate 3700 pF  International Rectifier IGBT Transistors Capacitance, Gate 3700 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Dual  International Rectifier Configuration Dual  IGBT Transistors Configuration Dual  International Rectifier IGBT Transistors Configuration Dual   Current, Collector 55 A  International Rectifier Current, Collector 55 A  IGBT Transistors Current, Collector 55 A  International Rectifier IGBT Transistors Current, Collector 55 A   Current, Continuous Collector 55 A  International Rectifier Current, Continuous Collector 55 A  IGBT Transistors Current, Continuous Collector 55 A  International Rectifier IGBT Transistors Current, Continuous Collector 55 A   Dimensions 15.90 x 5.30 x 20.30 mm  International Rectifier Dimensions 15.90 x 5.30 x 20.30 mm  IGBT Transistors Dimensions 15.90 x 5.30 x 20.30 mm  International Rectifier IGBT Transistors Dimensions 15.90 x 5.30 x 20.30 mm   Energy Rating 170 mJ  International Rectifier Energy Rating 170 mJ  IGBT Transistors Energy Rating 170 mJ  International Rectifier IGBT Transistors Energy Rating 170 mJ   Height 0.799" (20.3mm)  International Rectifier Height 0.799" (20.3mm)  IGBT Transistors Height 0.799" (20.3mm)  International Rectifier IGBT Transistors Height 0.799" (20.3mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  IGBT Transistors Power Dissipation 200 W  International Rectifier IGBT Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching 150 kHz  International Rectifier Speed, Switching 150 kHz  IGBT Transistors Speed, Switching 150 kHz  International Rectifier IGBT Transistors Speed, Switching 150 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Warp  International Rectifier Type Warp  IGBT Transistors Type Warp  International Rectifier IGBT Transistors Type Warp   Voltage, Collector to Emitter 2.3 V  International Rectifier Voltage, Collector to Emitter 2.3 V  IGBT Transistors Voltage, Collector to Emitter 2.3 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 2.3 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.3mm)  International Rectifier Width 0.209" (5.3mm)  IGBT Transistors Width 0.209" (5.3mm)  International Rectifier IGBT Transistors Width 0.209" (5.3mm)  
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