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Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's

Capacitance, Input	3600 pF
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Collector	57 A
Current, Drain	57 A
Dimensions	15.87 X 5.31 x 20.70 mm
Energy Rating	270 mJ
Height	0.815" (20.7mm)
Length	0.625" <5/8> (15.875mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-247AC
Polarity	N-Channel
Power Dissipation	200 W
Resistance, Thermal, Junction to Case	0.64 °C/W
Speed, Switching	<1 kHz
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	1170 ns
Time, Turn-On Delay	32 ns
Transconductance, Forward	40 S
Typical Gate Charge @ Vgs	167 nC @ 15 V
Voltage, Collector to Emitter Shorted	1200 V
Voltage, Collector to Emitter, Saturation	1.75 V
Voltage, Drain to Source	1200 V
Voltage, Gate to Source	±30 V
Width	0.209" (5.31mm)
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Capacitance, Input 3600 pF  International Rectifier Capacitance, Input 3600 pF  MOSFET Transistors Capacitance, Input 3600 pF  International Rectifier MOSFET Transistors Capacitance, Input 3600 pF   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Collector 57 A  International Rectifier Current, Collector 57 A  MOSFET Transistors Current, Collector 57 A  International Rectifier MOSFET Transistors Current, Collector 57 A   Current, Drain 57 A  International Rectifier Current, Drain 57 A  MOSFET Transistors Current, Drain 57 A  International Rectifier MOSFET Transistors Current, Drain 57 A   Dimensions 15.87 X 5.31 x 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 x 20.70 mm  MOSFET Transistors Dimensions 15.87 X 5.31 x 20.70 mm  International Rectifier MOSFET Transistors Dimensions 15.87 X 5.31 x 20.70 mm   Energy Rating 270 mJ  International Rectifier Energy Rating 270 mJ  MOSFET Transistors Energy Rating 270 mJ  International Rectifier MOSFET Transistors Energy Rating 270 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  MOSFET Transistors Height 0.815" (20.7mm)  International Rectifier MOSFET Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  MOSFET Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier MOSFET Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  MOSFET Transistors Package Type TO-247AC  International Rectifier MOSFET Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  MOSFET Transistors Polarity N-Channel  International Rectifier MOSFET Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  MOSFET Transistors Power Dissipation 200 W  International Rectifier MOSFET Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching <1 kHz  International Rectifier Speed, Switching <1 kHz  MOSFET Transistors Speed, Switching <1 kHz  International Rectifier MOSFET Transistors Speed, Switching <1 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 1170 ns  International Rectifier Time, Turn-Off Delay 1170 ns  MOSFET Transistors Time, Turn-Off Delay 1170 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 1170 ns   Time, Turn-On Delay 32 ns  International Rectifier Time, Turn-On Delay 32 ns  MOSFET Transistors Time, Turn-On Delay 32 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 32 ns   Transconductance, Forward 40 S  International Rectifier Transconductance, Forward 40 S  MOSFET Transistors Transconductance, Forward 40 S  International Rectifier MOSFET Transistors Transconductance, Forward 40 S   Typical Gate Charge @ Vgs 167 nC @ 15 V  International Rectifier Typical Gate Charge @ Vgs 167 nC @ 15 V  MOSFET Transistors Typical Gate Charge @ Vgs 167 nC @ 15 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 167 nC @ 15 V   Voltage, Collector to Emitter Shorted 1200 V  International Rectifier Voltage, Collector to Emitter Shorted 1200 V  MOSFET Transistors Voltage, Collector to Emitter Shorted 1200 V  International Rectifier MOSFET Transistors Voltage, Collector to Emitter Shorted 1200 V   Voltage, Collector to Emitter, Saturation 1.75 V  International Rectifier Voltage, Collector to Emitter, Saturation 1.75 V  MOSFET Transistors Voltage, Collector to Emitter, Saturation 1.75 V  International Rectifier MOSFET Transistors Voltage, Collector to Emitter, Saturation 1.75 V   Voltage, Drain to Source 1200 V  International Rectifier Voltage, Drain to Source 1200 V  MOSFET Transistors Voltage, Drain to Source 1200 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 1200 V   Voltage, Gate to Source ±30 V  International Rectifier Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  MOSFET Transistors Width 0.209" (5.31mm)  International Rectifier MOSFET Transistors Width 0.209" (5.31mm)