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Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

Capacitance, Gate	6900 pF
Channel Type	N
Configuration	Single
Current, Collector	85 A
Current, Continuous Collector	85 A
Dimensions	16.1 x 5.3 x 20.8 mm
Energy Rating	6.28 mJ
Height	0.819" (20.8mm)
Length	0.633" (16.1mm)
Mounting Type	Through Hole
Number of Pins	3
Package Type	Super-247
Polarity	N-Channel
Power Dissipation	350 W
Resistance, Thermal, Junction to Case	0.36 °C/W
Speed, Switching	30 kHz
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Type	Ultrafast
Voltage, Collector to Emitter	600 V
Voltage, Collector to Emitter Shorted	600 V
Voltage, Gate to Emitter	±20 V
Width	0.209" (5.3mm)
关键词

Capacitance, Gate 6900 pF  International Rectifier Capacitance, Gate 6900 pF  IGBT Transistors Capacitance, Gate 6900 pF  International Rectifier IGBT Transistors Capacitance, Gate 6900 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 85 A  International Rectifier Current, Collector 85 A  IGBT Transistors Current, Collector 85 A  International Rectifier IGBT Transistors Current, Collector 85 A   Current, Continuous Collector 85 A  International Rectifier Current, Continuous Collector 85 A  IGBT Transistors Current, Continuous Collector 85 A  International Rectifier IGBT Transistors Current, Continuous Collector 85 A   Dimensions 16.1 x 5.3 x 20.8 mm  International Rectifier Dimensions 16.1 x 5.3 x 20.8 mm  IGBT Transistors Dimensions 16.1 x 5.3 x 20.8 mm  International Rectifier IGBT Transistors Dimensions 16.1 x 5.3 x 20.8 mm   Energy Rating 6.28 mJ  International Rectifier Energy Rating 6.28 mJ  IGBT Transistors Energy Rating 6.28 mJ  International Rectifier IGBT Transistors Energy Rating 6.28 mJ   Height 0.819" (20.8mm)  International Rectifier Height 0.819" (20.8mm)  IGBT Transistors Height 0.819" (20.8mm)  International Rectifier IGBT Transistors Height 0.819" (20.8mm)   Length 0.633" (16.1mm)  International Rectifier Length 0.633" (16.1mm)  IGBT Transistors Length 0.633" (16.1mm)  International Rectifier IGBT Transistors Length 0.633" (16.1mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type Super-247  International Rectifier Package Type Super-247  IGBT Transistors Package Type Super-247  International Rectifier IGBT Transistors Package Type Super-247   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 350 W  International Rectifier Power Dissipation 350 W  IGBT Transistors Power Dissipation 350 W  International Rectifier IGBT Transistors Power Dissipation 350 W   Resistance, Thermal, Junction to Case 0.36 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.36 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.36 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.36 °C/W   Speed, Switching 30 kHz  International Rectifier Speed, Switching 30 kHz  IGBT Transistors Speed, Switching 30 kHz  International Rectifier IGBT Transistors Speed, Switching 30 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.3mm)  International Rectifier Width 0.209" (5.3mm)  IGBT Transistors Width 0.209" (5.3mm)  International Rectifier IGBT Transistors Width 0.209" (5.3mm)