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N-Channel Power MOSFET 50A to 59A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Brand/Series	HEXFET Series
Current, Drain	52 A
Gate Charge, Total	98 nC
Package Type	TO-220 Full-Pak
Polarization	N-Channel
Power Dissipation	58 W
Resistance, Drain to Source On	0.01 Ohm
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Time, Turn-Off Delay	37 ns
Time, Turn-On Delay	12 ns
Transconductance, Forward	50 S
Voltage, Breakdown, Drain to Source	55 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	±16 V
关键词

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Current, Drain 52 A  International Rectifier Current, Drain 52 A  MOSFET Transistors Current, Drain 52 A  International Rectifier MOSFET Transistors Current, Drain 52 A   Gate Charge, Total 98 nC  International Rectifier Gate Charge, Total 98 nC  MOSFET Transistors Gate Charge, Total 98 nC  International Rectifier MOSFET Transistors Gate Charge, Total 98 nC   Package Type TO-220 Full-Pak  International Rectifier Package Type TO-220 Full-Pak  MOSFET Transistors Package Type TO-220 Full-Pak  International Rectifier MOSFET Transistors Package Type TO-220 Full-Pak   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 58 W  International Rectifier Power Dissipation 58 W  MOSFET Transistors Power Dissipation 58 W  International Rectifier MOSFET Transistors Power Dissipation 58 W   Resistance, Drain to Source On 0.01 Ohm  International Rectifier Resistance, Drain to Source On 0.01 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.01 Ohm  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.01 Ohm   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 37 ns  International Rectifier Time, Turn-Off Delay 37 ns  MOSFET Transistors Time, Turn-Off Delay 37 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 37 ns   Time, Turn-On Delay 12 ns  International Rectifier Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 50 S  International Rectifier Transconductance, Forward 50 S  MOSFET Transistors Transconductance, Forward 50 S  International Rectifier MOSFET Transistors Transconductance, Forward 50 S   Voltage, Breakdown, Drain to Source 55 V  International Rectifier Voltage, Breakdown, Drain to Source 55 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±16 V  International Rectifier Voltage, Gate to Source ±16 V  MOSFET Transistors Voltage, Gate to Source ±16 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V