Brand/Series |
HEXFET Series |
|
Capacitance, Input |
85 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
1.2 A |
|
Dimensions |
3.04 x 1.40 x 1.02 mm |
|
Gate Charge, Total |
3.3 nC |
|
Height |
0.04" (1.02mm) |
|
Length |
0.119" (3.04mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
SOT-23 |
|
Polarization |
N-Channel |
|
Power Dissipation |
540 W |
|
Resistance, Drain to Source On |
0.4 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
9 ns |
|
Time, Turn-On Delay |
3.9 ns |
|
Transconductance, Forward |
0.87 S |
|
Typical Gate Charge @ Vgs |
3.3 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
30 V |
|
Voltage, Drain to Source |
30 V |
|
Voltage, Forward, Diode |
1.2 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.055" (1.4mm) |
|
关键词 |