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These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device
for use in battery and load management. A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET® Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3™ allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Features:

Ultra Low On-Resistance

P-Channel MOSFET

SOT-23 Footprint

Low Profile (<1.1 mm)

Available in Tape and Reel

Fast Switching

1.8 V Gate Rated

Brand/Series	HEXFET Series
Capacitance, Input	830 pF @ -10 V
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
Current, Drain	-3.4 A
Dimensions	3.04 x 1.40 x 1.02 mm
Gate Charge, Total	10 nC
Height	0.04" (1.02mm)
Length	0.119" (3.04mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Package Type	Micro3
Polarization	P-Channel
Power Dissipation	1.3 W
Resistance, Drain to Source On	0.085 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	32 ns
Time, Turn-On Delay	11 ns
Transconductance, Forward	8.6 S
Typical Gate Charge @ Vgs	10 nC @ -5 V
Voltage, Breakdown, Drain to Source	-12 V
Voltage, Drain to Source	-12 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	± 8 V
Width	0.055" (1.4mm)
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• ON Semiconductor
  TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.); 60 VDC (MAX.); 6.0 VDC (MAX.)
  
  型号：MMBT3904LT1G
  仓库库存编号：70099530
  
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• 搜索

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• Honeywell
  Potentiometer, Cnd Pl, Rest 5 Kilohms, Panel, Linear, Pwr-Rtg 2W, Shaft Dia 0.25In
  
  型号：RV4NAYSD502A
  仓库库存编号：70153162
  
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• Panasonic
  Resistor; Thick Film; Res 270 Kilohms; Pwr-Rtg 0.1 W; Tol 1%; SMT; 0603; Cut Tape
  
  型号：ERJ-3EKF2703V
  仓库库存编号：70265749
  
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• Panasonic
  Resistor; Thick Film; Res 330 Ohms; Pwr-Rtg 0.1 W; Tol 1%; SMT; 0603; Cut Tape
  
  型号：ERJ-3EKF3300V
  仓库库存编号：70265776
  
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• Amphenol FCI
  Conn; Rect; Header; 6 Pos; 2.54mm Pitch; Bergstik II; Self Ret; High Temp
  
  型号：69192-406HLF
  仓库库存编号：70302519
  
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Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 830 pF @ -10 V  International Rectifier Capacitance, Input 830 pF @ -10 V  MOSFET Transistors Capacitance, Input 830 pF @ -10 V  International Rectifier MOSFET Transistors Capacitance, Input 830 pF @ -10 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type P  International Rectifier Channel Type P  MOSFET Transistors Channel Type P  International Rectifier MOSFET Transistors Channel Type P   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain -3.4 A  International Rectifier Current, Drain -3.4 A  MOSFET Transistors Current, Drain -3.4 A  International Rectifier MOSFET Transistors Current, Drain -3.4 A   Dimensions 3.04 x 1.40 x 1.02 mm  International Rectifier Dimensions 3.04 x 1.40 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.40 x 1.02 mm  International Rectifier MOSFET Transistors Dimensions 3.04 x 1.40 x 1.02 mm   Gate Charge, Total 10 nC  International Rectifier Gate Charge, Total 10 nC  MOSFET Transistors Gate Charge, Total 10 nC  International Rectifier MOSFET Transistors Gate Charge, Total 10 nC   Height 0.04" (1.02mm)  International Rectifier Height 0.04" (1.02mm)  MOSFET Transistors Height 0.04" (1.02mm)  International Rectifier MOSFET Transistors Height 0.04" (1.02mm)   Length 0.119" (3.04mm)  International Rectifier Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  International Rectifier MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type Micro3  International Rectifier Package Type Micro3  MOSFET Transistors Package Type Micro3  International Rectifier MOSFET Transistors Package Type Micro3   Polarization P-Channel  International Rectifier Polarization P-Channel  MOSFET Transistors Polarization P-Channel  International Rectifier MOSFET Transistors Polarization P-Channel   Power Dissipation 1.3 W  International Rectifier Power Dissipation 1.3 W  MOSFET Transistors Power Dissipation 1.3 W  International Rectifier MOSFET Transistors Power Dissipation 1.3 W   Resistance, Drain to Source On 0.085 Ω  International Rectifier Resistance, Drain to Source On 0.085 Ω  MOSFET Transistors Resistance, Drain to Source On 0.085 Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.085 Ω   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 32 ns  International Rectifier Time, Turn-Off Delay 32 ns  MOSFET Transistors Time, Turn-Off Delay 32 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 32 ns   Time, Turn-On Delay 11 ns  International Rectifier Time, Turn-On Delay 11 ns  MOSFET Transistors Time, Turn-On Delay 11 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 11 ns   Transconductance, Forward 8.6 S  International Rectifier Transconductance, Forward 8.6 S  MOSFET Transistors Transconductance, Forward 8.6 S  International Rectifier MOSFET Transistors Transconductance, Forward 8.6 S   Typical Gate Charge @ Vgs 10 nC @ -5 V  International Rectifier Typical Gate Charge @ Vgs 10 nC @ -5 V  MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -5 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -5 V   Voltage, Breakdown, Drain to Source -12 V  International Rectifier Voltage, Breakdown, Drain to Source -12 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V   Voltage, Drain to Source -12 V  International Rectifier Voltage, Drain to Source -12 V  MOSFET Transistors Voltage, Drain to Source -12 V  International Rectifier MOSFET Transistors Voltage, Drain to Source -12 V   Voltage, Forward, Diode -1.2 V  International Rectifier Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ± 8 V  International Rectifier Voltage, Gate to Source ± 8 V  MOSFET Transistors Voltage, Gate to Source ± 8 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ± 8 V   Width 0.055" (1.4mm)  International Rectifier Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  International Rectifier MOSFET Transistors Width 0.055" (1.4mm)