关于我们 | 联系我们

库存查询

N-Channel Power MOSFET 30A to 39A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Brand/Series	HEXFET Series
Capacitance, Input	880 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	30 A
Dimensions	10.54 x 4.69 x 15.24 mm
Gate Charge, Total	25 nC
Height	0.6" (15.24mm)
Length	0.414" (10.54mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	68 W
Resistance, Drain to Source On	0.06 Ω
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Time, Turn-Off Delay	21 ns
Time, Turn-On Delay	8.9 ns
Transconductance, Forward	11 sec
Typical Gate Charge @ Vgs	Maximum of 25 nC @ 5 V
Voltage, Breakdown, Drain to Source	55 V
Voltage, Drain to Source	55 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	± 16 V
Width	0.185" (4.69mm)
关键词

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 880 pF @ 25 V  International Rectifier Capacitance, Input 880 pF @ 25 V  MOSFET Transistors Capacitance, Input 880 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 880 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain 30 A  International Rectifier Current, Drain 30 A  MOSFET Transistors Current, Drain 30 A  International Rectifier MOSFET Transistors Current, Drain 30 A   Dimensions 10.54 x 4.69 x 15.24 mm  International Rectifier Dimensions 10.54 x 4.69 x 15.24 mm  MOSFET Transistors Dimensions 10.54 x 4.69 x 15.24 mm  International Rectifier MOSFET Transistors Dimensions 10.54 x 4.69 x 15.24 mm   Gate Charge, Total 25 nC  International Rectifier Gate Charge, Total 25 nC  MOSFET Transistors Gate Charge, Total 25 nC  International Rectifier MOSFET Transistors Gate Charge, Total 25 nC   Height 0.6" (15.24mm)  International Rectifier Height 0.6" (15.24mm)  MOSFET Transistors Height 0.6" (15.24mm)  International Rectifier MOSFET Transistors Height 0.6" (15.24mm)   Length 0.414" (10.54mm)  International Rectifier Length 0.414" (10.54mm)  MOSFET Transistors Length 0.414" (10.54mm)  International Rectifier MOSFET Transistors Length 0.414" (10.54mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  International Rectifier MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 68 W  International Rectifier Power Dissipation 68 W  MOSFET Transistors Power Dissipation 68 W  International Rectifier MOSFET Transistors Power Dissipation 68 W   Resistance, Drain to Source On 0.06 Ω  International Rectifier Resistance, Drain to Source On 0.06 Ω  MOSFET Transistors Resistance, Drain to Source On 0.06 Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.06 Ω   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 21 ns  International Rectifier Time, Turn-Off Delay 21 ns  MOSFET Transistors Time, Turn-Off Delay 21 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 21 ns   Time, Turn-On Delay 8.9 ns  International Rectifier Time, Turn-On Delay 8.9 ns  MOSFET Transistors Time, Turn-On Delay 8.9 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 8.9 ns   Transconductance, Forward 11 sec  International Rectifier Transconductance, Forward 11 sec  MOSFET Transistors Transconductance, Forward 11 sec  International Rectifier MOSFET Transistors Transconductance, Forward 11 sec   Typical Gate Charge @ Vgs Maximum of 25 nC @ 5 V  International Rectifier Typical Gate Charge @ Vgs Maximum of 25 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 25 nC @ 5 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 25 nC @ 5 V   Voltage, Breakdown, Drain to Source 55 V  International Rectifier Voltage, Breakdown, Drain to Source 55 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V   Voltage, Drain to Source 55 V  International Rectifier Voltage, Drain to Source 55 V  MOSFET Transistors Voltage, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ± 16 V  International Rectifier Voltage, Gate to Source ± 16 V  MOSFET Transistors Voltage, Gate to Source ± 16 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ± 16 V   Width 0.185" (4.69mm)  International Rectifier Width 0.185" (4.69mm)  MOSFET Transistors Width 0.185" (4.69mm)  International Rectifier MOSFET Transistors Width 0.185" (4.69mm)