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24AA16-I/MS
24AA16-I/MS -
16K, 2K X 8 1.8V SERIAL EE, IND
声明:图片仅供参考,请以实物为准!
制造商:
Microchip Technology Inc.
Microchip Technology Inc.
制造商产品编号:
24AA16-I/MS
仓库库存编号:
70045820
技术数据表:
Datasheet
订购热线:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!
24AA16-I/MS产品概述
Features:
Self-Timed Write Cycle and Page Write Mode
Power On/Off Data Protection Circuitry
Sequential Read Function
24AA16-I/MS产品信息
Brand/Series
24AA16 Series
Capacitance, Input
10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±1 μA
Current, Operating
0.01 mA (Read), 3 mA (Write)
Current, Output, Leakage
±1 μA
Data Retention
>200 yrs.
Density
16K
Interface
2-Wire
Memory Type
Serial EEPROM
Organization
256×8
Package Type
MSOP
Supply Voltage
1.7 to 5.5 V
Temperature, Operating
-40 to +85 °C
Time, Access
900 ns
Time, Fall
300 ns
Time, Rise
1000 ns
Voltage, ESD
≥4 kV
Voltage, Input, High Level
1.19 V
Voltage, Input, Low Level
0.51 V
Voltage, Output, Low Level
0.4 V
关键词
24AA16-I/MS相关搜索
Brand/Series 24AA16 Series
Microchip Technology Inc. Brand/Series 24AA16 Series
EEPROM Memory Chips Brand/Series 24AA16 Series
Microchip Technology Inc. EEPROM Memory Chips Brand/Series 24AA16 Series
Capacitance, Input 10 pF
Microchip Technology Inc. Capacitance, Input 10 pF
EEPROM Memory Chips Capacitance, Input 10 pF
Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 10 pF
Capacitance, Output 10 pF
Microchip Technology Inc. Capacitance, Output 10 pF
EEPROM Memory Chips Capacitance, Output 10 pF
Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 10 pF
Current, Input, Leakage ±1 μA
Microchip Technology Inc. Current, Input, Leakage ±1 μA
EEPROM Memory Chips Current, Input, Leakage ±1 μA
Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA
Current, Operating 0.01 mA (Read), 3 mA (Write)
Microchip Technology Inc. Current, Operating 0.01 mA (Read), 3 mA (Write)
EEPROM Memory Chips Current, Operating 0.01 mA (Read), 3 mA (Write)
Microchip Technology Inc. EEPROM Memory Chips Current, Operating 0.01 mA (Read), 3 mA (Write)
Current, Output, Leakage ±1 μA
Microchip Technology Inc. Current, Output, Leakage ±1 μA
EEPROM Memory Chips Current, Output, Leakage ±1 μA
Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA
Data Retention >200 yrs.
Microchip Technology Inc. Data Retention >200 yrs.
EEPROM Memory Chips Data Retention >200 yrs.
Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.
Density 16K
Microchip Technology Inc. Density 16K
EEPROM Memory Chips Density 16K
Microchip Technology Inc. EEPROM Memory Chips Density 16K
Interface 2-Wire
Microchip Technology Inc. Interface 2-Wire
EEPROM Memory Chips Interface 2-Wire
Microchip Technology Inc. EEPROM Memory Chips Interface 2-Wire
Memory Type Serial EEPROM
Microchip Technology Inc. Memory Type Serial EEPROM
EEPROM Memory Chips Memory Type Serial EEPROM
Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM
Organization 256×8
Microchip Technology Inc. Organization 256×8
EEPROM Memory Chips Organization 256×8
Microchip Technology Inc. EEPROM Memory Chips Organization 256×8
Package Type MSOP
Microchip Technology Inc. Package Type MSOP
EEPROM Memory Chips Package Type MSOP
Microchip Technology Inc. EEPROM Memory Chips Package Type MSOP
Supply Voltage 1.7 to 5.5 V
Microchip Technology Inc. Supply Voltage 1.7 to 5.5 V
EEPROM Memory Chips Supply Voltage 1.7 to 5.5 V
Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 1.7 to 5.5 V
Temperature, Operating -40 to +85 °C
Microchip Technology Inc. Temperature, Operating -40 to +85 °C
EEPROM Memory Chips Temperature, Operating -40 to +85 °C
Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C
Time, Access 900 ns
Microchip Technology Inc. Time, Access 900 ns
EEPROM Memory Chips Time, Access 900 ns
Microchip Technology Inc. EEPROM Memory Chips Time, Access 900 ns
Time, Fall 300 ns
Microchip Technology Inc. Time, Fall 300 ns
EEPROM Memory Chips Time, Fall 300 ns
Microchip Technology Inc. EEPROM Memory Chips Time, Fall 300 ns
Time, Rise 1000 ns
Microchip Technology Inc. Time, Rise 1000 ns
EEPROM Memory Chips Time, Rise 1000 ns
Microchip Technology Inc. EEPROM Memory Chips Time, Rise 1000 ns
Voltage, ESD ≥4 kV
Microchip Technology Inc. Voltage, ESD ≥4 kV
EEPROM Memory Chips Voltage, ESD ≥4 kV
Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD ≥4 kV
Voltage, Input, High Level 1.19 V
Microchip Technology Inc. Voltage, Input, High Level 1.19 V
EEPROM Memory Chips Voltage, Input, High Level 1.19 V
Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 1.19 V
Voltage, Input, Low Level 0.51 V
Microchip Technology Inc. Voltage, Input, Low Level 0.51 V
EEPROM Memory Chips Voltage, Input, Low Level 0.51 V
Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.51 V
Voltage, Output, Low Level 0.4 V
Microchip Technology Inc. Voltage, Output, Low Level 0.4 V
EEPROM Memory Chips Voltage, Output, Low Level 0.4 V
Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.4 V
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sales@szcwdz.com
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800152669
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