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The Microchip Technology Inc. 24AA08/24LC08B (24XX08) is a 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit
memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7 V, with standby and active currents of only 1 μA and 1 mA,
respectively. The 24XX08 also has a page write capability for up to 16 bytes of data. The 24XX08 is available in the standard 8-pin PDIP, surface mount
SOIC, TSSOP, 2x3 DFN, 2x3 TDFN and MSOP packages, and is also available in the 5-lead SOT-23 package. All packages are Pb-free and RoHS compliant.

Brand/Series	24LC08B Series
Capacitance, Input	10 pF
Capacitance, Output	10 pF
Current, Input, Leakage	±1 μA
Current, Operating	0.05 mA (Read), 0.1 mA (Write)
Current, Output, Leakage	±1 μA
Data Retention	>200 yrs.
Density	8K
Interface	2-Wire
Memory Type	Serial EEPROM
Organization	256×8
Package Type	SOT-23
Supply Voltage	2.5 to 5.5 V
Temperature, Operating	-40 to +85 °C
Time, Access	900 ns
Time, Fall	300 ns
Time, Rise	300 ns
Voltage, ESD	≥4 kV
Voltage, Input, High Level	1.75 V
Voltage, Input, Low Level	0.75 V
Voltage, Output, Low Level	0.4 V
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Brand/Series 24LC08B Series  Microchip Technology Inc. Brand/Series 24LC08B Series  EEPROM Memory Chips Brand/Series 24LC08B Series  Microchip Technology Inc. EEPROM Memory Chips Brand/Series 24LC08B Series   Capacitance, Input 10 pF  Microchip Technology Inc. Capacitance, Input 10 pF  EEPROM Memory Chips Capacitance, Input 10 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 10 pF   Capacitance, Output 10 pF  Microchip Technology Inc. Capacitance, Output 10 pF  EEPROM Memory Chips Capacitance, Output 10 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 10 pF   Current, Input, Leakage ±1 μA  Microchip Technology Inc. Current, Input, Leakage ±1 μA  EEPROM Memory Chips Current, Input, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 0.05 mA (Read), 0.1 mA (Write)  Microchip Technology Inc. Current, Operating 0.05 mA (Read), 0.1 mA (Write)  EEPROM Memory Chips Current, Operating 0.05 mA (Read), 0.1 mA (Write)  Microchip Technology Inc. EEPROM Memory Chips Current, Operating 0.05 mA (Read), 0.1 mA (Write)   Current, Output, Leakage ±1 μA  Microchip Technology Inc. Current, Output, Leakage ±1 μA  EEPROM Memory Chips Current, Output, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA   Data Retention >200 yrs.  Microchip Technology Inc. Data Retention >200 yrs.  EEPROM Memory Chips Data Retention >200 yrs.  Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.   Density 8K  Microchip Technology Inc. Density 8K  EEPROM Memory Chips Density 8K  Microchip Technology Inc. EEPROM Memory Chips Density 8K   Interface 2-Wire  Microchip Technology Inc. Interface 2-Wire  EEPROM Memory Chips Interface 2-Wire  Microchip Technology Inc. EEPROM Memory Chips Interface 2-Wire   Memory Type Serial EEPROM  Microchip Technology Inc. Memory Type Serial EEPROM  EEPROM Memory Chips Memory Type Serial EEPROM  Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM   Organization 256×8  Microchip Technology Inc. Organization 256×8  EEPROM Memory Chips Organization 256×8  Microchip Technology Inc. EEPROM Memory Chips Organization 256×8   Package Type SOT-23  Microchip Technology Inc. Package Type SOT-23  EEPROM Memory Chips Package Type SOT-23  Microchip Technology Inc. EEPROM Memory Chips Package Type SOT-23   Supply Voltage 2.5 to 5.5 V  Microchip Technology Inc. Supply Voltage 2.5 to 5.5 V  EEPROM Memory Chips Supply Voltage 2.5 to 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 2.5 to 5.5 V   Temperature, Operating -40 to +85 °C  Microchip Technology Inc. Temperature, Operating -40 to +85 °C  EEPROM Memory Chips Temperature, Operating -40 to +85 °C  Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C   Time, Access 900 ns  Microchip Technology Inc. Time, Access 900 ns  EEPROM Memory Chips Time, Access 900 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Access 900 ns   Time, Fall 300 ns  Microchip Technology Inc. Time, Fall 300 ns  EEPROM Memory Chips Time, Fall 300 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Fall 300 ns   Time, Rise 300 ns  Microchip Technology Inc. Time, Rise 300 ns  EEPROM Memory Chips Time, Rise 300 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Rise 300 ns   Voltage, ESD ≥4 kV  Microchip Technology Inc. Voltage, ESD ≥4 kV  EEPROM Memory Chips Voltage, ESD ≥4 kV  Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD ≥4 kV   Voltage, Input, High Level 1.75 V  Microchip Technology Inc. Voltage, Input, High Level 1.75 V  EEPROM Memory Chips Voltage, Input, High Level 1.75 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 1.75 V   Voltage, Input, Low Level 0.75 V  Microchip Technology Inc. Voltage, Input, Low Level 0.75 V  EEPROM Memory Chips Voltage, Input, Low Level 0.75 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.75 V   Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. Voltage, Output, Low Level 0.4 V  EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.4 V