Brand/Series |
Transistor Series |
|
Complement to |
NPN |
|
Configuration |
Common Base |
|
Current, Collector |
150 mA |
|
Current, Continuous Collector |
150 mA |
|
Current, Emitter |
100 mA |
|
Current, Emitter Cutoff |
0.5 μA |
|
Current, Gain |
24 |
|
Device Dissipation |
150 mW |
|
Diameter |
8.95 mm |
|
Dimensions |
8.95 Dia. x 6.35 H mm |
|
Frequency, Operating |
25 MHz |
|
Gain, DC Current, Minimum |
30 |
|
Height |
0.25" (6.35mm) |
|
Material |
Si |
|
Material Type |
Germanium |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-5 |
|
Polarity |
PNP |
|
Power Dissipation |
150 mW |
|
Primary Type |
Ge |
|
Temperature Range, Junction, Operating |
-65 to +150 °C |
|
Temperature, Operating, Maximum |
+100 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +100 °C |
|
Transistor Polarity |
NPN |
|
Transistor Type |
PNP |
|
Type |
Driver, Power |
|
Voltage, Base to Emitter |
12 V |
|
Voltage, Breakdown, Collector to Emitter |
25 V |
|
Voltage, Collector to Base |
25 V |
|
Voltage, Collector to Emitter |
24 V |
|
Voltage, Collector to Emitter, Saturation |
0.15 V |
|
Voltage, Emitter to Base |
12 V |
|
Voltage, Saturation, Collector to Emitter |
0.09 V |
|
关键词 |