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NTE102 - 

TRANSISTOR PNP GERMANIUM 25V 0.15A TO-5PRE-AMP DRIVER OUTPUT

NTE Electronics, Inc. NTE102
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTE102
仓库库存编号:
70214847
技术数据表:
View NTE102 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE102产品概述

Germanium Complementaryyy Transistors, Power Output, Driver, Germanium Material Type

NTE102产品信息

  Brand/Series  Transistor Series  
  Complement to  NPN  
  Configuration  Common Base  
  Current, Collector  150 mA  
  Current, Continuous Collector  150 mA  
  Current, Emitter  100 mA  
  Current, Emitter Cutoff  0.5 μA  
  Current, Gain  24  
  Device Dissipation  150 mW  
  Diameter  8.95 mm  
  Dimensions  8.95 Dia. x 6.35 H mm  
  Frequency, Operating  25 MHz  
  Gain, DC Current, Minimum  30  
  Height  0.25" (6.35mm)  
  Material  Si  
  Material Type  Germanium  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-5  
  Polarity  PNP  
  Power Dissipation  150 mW  
  Primary Type  Ge  
  Temperature Range, Junction, Operating  -65 to +150 °C  
  Temperature, Operating, Maximum  +100 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +100 °C  
  Transistor Polarity  NPN  
  Transistor Type  PNP  
  Type  Driver, Power  
  Voltage, Base to Emitter  12 V  
  Voltage, Breakdown, Collector to Emitter  25 V  
  Voltage, Collector to Base  25 V  
  Voltage, Collector to Emitter  24 V  
  Voltage, Collector to Emitter, Saturation  0.15 V  
  Voltage, Emitter to Base  12 V  
  Voltage, Saturation, Collector to Emitter  0.09 V  
关键词         

NTE102相关搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to NPN  NTE Electronics, Inc. Complement to NPN  Bipolar Transistors Complement to NPN  NTE Electronics, Inc. Bipolar Transistors Complement to NPN   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 150 mA  NTE Electronics, Inc. Current, Collector 150 mA  Bipolar Transistors Current, Collector 150 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 150 mA   Current, Continuous Collector 150 mA  NTE Electronics, Inc. Current, Continuous Collector 150 mA  Bipolar Transistors Current, Continuous Collector 150 mA  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 150 mA   Current, Emitter 100 mA  NTE Electronics, Inc. Current, Emitter 100 mA  Bipolar Transistors Current, Emitter 100 mA  NTE Electronics, Inc. Bipolar Transistors Current, Emitter 100 mA   Current, Emitter Cutoff 0.5 μA  NTE Electronics, Inc. Current, Emitter Cutoff 0.5 μA  Bipolar Transistors Current, Emitter Cutoff 0.5 μA  NTE Electronics, Inc. Bipolar Transistors Current, Emitter Cutoff 0.5 μA   Current, Gain 24  NTE Electronics, Inc. Current, Gain 24  Bipolar Transistors Current, Gain 24  NTE Electronics, Inc. Bipolar Transistors Current, Gain 24   Device Dissipation 150 mW  NTE Electronics, Inc. Device Dissipation 150 mW  Bipolar Transistors Device Dissipation 150 mW  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 150 mW   Diameter 8.95 mm  NTE Electronics, Inc. Diameter 8.95 mm  Bipolar Transistors Diameter 8.95 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 8.95 mm   Dimensions 8.95 Dia. x 6.35 H mm  NTE Electronics, Inc. Dimensions 8.95 Dia. x 6.35 H mm  Bipolar Transistors Dimensions 8.95 Dia. x 6.35 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 8.95 Dia. x 6.35 H mm   Frequency, Operating 25 MHz  NTE Electronics, Inc. Frequency, Operating 25 MHz  Bipolar Transistors Frequency, Operating 25 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 25 MHz   Gain, DC Current, Minimum 30  NTE Electronics, Inc. Gain, DC Current, Minimum 30  Bipolar Transistors Gain, DC Current, Minimum 30  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 30   Height 0.25" (6.35mm)  NTE Electronics, Inc. Height 0.25" (6.35mm)  Bipolar Transistors Height 0.25" (6.35mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.25" (6.35mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Germanium  NTE Electronics, Inc. Material Type Germanium  Bipolar Transistors Material Type Germanium  NTE Electronics, Inc. Bipolar Transistors Material Type Germanium   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-5  NTE Electronics, Inc. Package Type TO-5  Bipolar Transistors Package Type TO-5  NTE Electronics, Inc. Bipolar Transistors Package Type TO-5   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 150 mW  NTE Electronics, Inc. Power Dissipation 150 mW  Bipolar Transistors Power Dissipation 150 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 150 mW   Primary Type Ge  NTE Electronics, Inc. Primary Type Ge  Bipolar Transistors Primary Type Ge  NTE Electronics, Inc. Bipolar Transistors Primary Type Ge   Temperature Range, Junction, Operating -65 to +150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +150 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +150 °C   Temperature, Operating, Maximum +100 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +100 °C  Bipolar Transistors Temperature, Operating, Maximum +100 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +100 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +100 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +100 °C  Bipolar Transistors Temperature, Operating, Range -65 to +100 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +100 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Driver, Power  NTE Electronics, Inc. Type Driver, Power  Bipolar Transistors Type Driver, Power  NTE Electronics, Inc. Bipolar Transistors Type Driver, Power   Voltage, Base to Emitter 12 V  NTE Electronics, Inc. Voltage, Base to Emitter 12 V  Bipolar Transistors Voltage, Base to Emitter 12 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Base to Emitter 12 V   Voltage, Breakdown, Collector to Emitter 25 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 25 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 25 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 25 V   Voltage, Collector to Base 25 V  NTE Electronics, Inc. Voltage, Collector to Base 25 V  Bipolar Transistors Voltage, Collector to Base 25 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 25 V   Voltage, Collector to Emitter 24 V  NTE Electronics, Inc. Voltage, Collector to Emitter 24 V  Bipolar Transistors Voltage, Collector to Emitter 24 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 24 V   Voltage, Collector to Emitter, Saturation 0.15 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.15 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.15 V   Voltage, Emitter to Base 12 V  NTE Electronics, Inc. Voltage, Emitter to Base 12 V  Bipolar Transistors Voltage, Emitter to Base 12 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 12 V   Voltage, Saturation, Collector to Emitter 0.09 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.09 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.09 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.09 V  
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