Amplifier Type |
Medium Power |
|
Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
1 A |
|
Current, Gain |
63 |
|
Diameter |
6.09 mm |
|
Dimensions |
6.09 Dia. x 10.4 H mm |
|
Frequency, Operating |
2.3 MHz |
|
Height |
0.409" (10.4mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-1 |
|
Polarity |
PNP |
|
Power Dissipation |
650 mW |
|
Primary Type |
Ge |
|
Temperature, Operating, Maximum |
+90 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +90 °C |
|
Transistor Polarity |
PNP |
|
Transistor Type |
PNP |
|
Type |
Amplifier, Power |
|
Voltage, Collector to Base |
32 V |
|
Voltage, Collector to Emitter |
10 V |
|
Voltage, Collector to Emitter, Saturation |
0.17 V |
|
Voltage, Emitter to Base |
10 V |
|
Voltage, Saturation, Collector to Emitter |
0.17 V |
|
关键词 |