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Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	50 mA
Current, Gain	20
Diameter	5.28 mm
Dimensions	5.28 Dia. x 4.57 H mm
Frequency, Operating	600 MHz
Height	0.18" (4.57mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-106
Polarity	NPN
Power Dissipation	625 mW
Primary Type	Si
Resistance, Thermal, Junction to Case	83.3 °C/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Type	NPN
Type	Amplifier, High Frequency
Voltage, Breakdown, Collector to Emitter	15 V
Voltage, Collector to Base	30 V
Voltage, Collector to Emitter	15 V
Voltage, Collector to Emitter, Saturation	0.4 V
Voltage, Emitter to Base	3 V
Voltage, Saturation, Base to Emitter	1 V
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mm  Bipolar Transistors Dimensions 5.28 Dia. x 4.57 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.28 Dia. x 4.57 H mm   Frequency, Operating 600 MHz  NTE Electronics, Inc. Frequency, Operating 600 MHz  Bipolar Transistors Frequency, Operating 600 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 600 MHz   Height 0.18" (4.57mm)  NTE Electronics, Inc. Height 0.18" (4.57mm)  Bipolar Transistors Height 0.18" (4.57mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.18" (4.57mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE 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°C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor 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Transistors Voltage, Collector to Emitter 15 V   Voltage, Collector to Emitter, Saturation 0.4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V   Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 3 V   Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V