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NTE123AP-5 - 

Transistor; TO92; NPN; 40; 60; 6 V; 600mA; 1 W @ 25 degC; -55 to 150 degC; 357

NTE Electronics, Inc. NTE123AP-5
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE123AP-5
仓库库存编号：
70215883
技术数据表：
View NTE123AP-5 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE123AP-5产品概述

Silicon NPN Transistor Audio Amplifiers

NTE123AP-5产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Continuous Collector  600 mA  
  Current, Gain  20  
  Device Dissipation  1 W  
  Dimensions  5.2 x 4.2 x 5.33 mm  
  Gain, DC Current, Maximum  300  
  Gain, DC Current, Minimum  20  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Power Dissipation  625 mW  
  Resistance, Thermal, Junction to Case  125 °C⁄W  
  Temperature Range, Junction, Operating  -55 to 150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  357 °C⁄W  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  0.75 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  1.2 V  
  Width  0.165" (4.2mm)  
关键词         

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Transistors Package Type TO-92   Power Dissipation 625 mW  NTE Electronics, Inc. Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 625 mW   Resistance, Thermal, Junction to Case 125 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 125 °C⁄W  Bipolar Transistors Resistance, Thermal, Junction to Case 125 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 125 °C⁄W   Temperature Range, Junction, Operating -55 to 150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to 150 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to 150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 357 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 357 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 357 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 357 °C⁄W   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar 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Inc. Voltage, Collector to Emitter, Saturation 0.75 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.2 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.2 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.2 V   Width 0.165" (4.2mm)  NTE Electronics, Inc. Width 0.165" (4.2mm)  Bipolar Transistors Width 0.165" (4.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.165" (4.2mm)  
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