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NTE123AP - 

TRANSISTOR NPN SILICON 75V IC=0.6A TO-92 AUDIO TO VHF FREQUENCY DRIVER SWITCH CO

NTE Electronics, Inc. NTE123AP
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE123AP
仓库库存编号：
70214870
技术数据表：
View NTE123AP Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE123AP产品概述

Silicon NPN Transistor, Audio Amplifier, Switch, Silicone Material Type

NTE123AP产品信息

  Brand/Series  Transistor Series  
  Complement to  NTE159  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Continuous Collector  600 mA  
  Current, Gain  20  
  Device Dissipation  350 mW  
  Dimensions  5.2 x 4.2 x 5.33 mm  
  Frequency, Operating  250 MHz  
  Gain, DC Current, Minimum  20  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Temperature Range, Junction, Operating  -55 to +150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Polarity  PNP  
  Transistor Type  NPN  
  Type  Audio Amplifier, Switch  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  0.75 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  1.2 V  
  Voltage, Saturation, Collector to Emitter  0.75 V  
  Width  0.165" (4.2mm)  
关键词         

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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to NTE159  NTE Electronics, Inc. Complement to NTE159  Bipolar Transistors Complement to NTE159  NTE Electronics, Inc. Bipolar Transistors Complement to NTE159   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 600 mA  NTE Electronics, Inc. Current, Collector 600 mA  Bipolar Transistors Current, Collector 600 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 600 mA   Current, Continuous Collector 600 mA  NTE Electronics, Inc. Current, Continuous Collector 600 mA  Bipolar Transistors Current, Continuous Collector 600 mA  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 600 mA   Current, Gain 20  NTE Electronics, Inc. Current, Gain 20  Bipolar Transistors Current, Gain 20  NTE Electronics, Inc. Bipolar Transistors Current, Gain 20   Device Dissipation 350 mW  NTE Electronics, Inc. Device Dissipation 350 mW  Bipolar Transistors Device Dissipation 350 mW  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 350 mW   Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. Dimensions 5.2 x 4.2 x 5.33 mm  Bipolar Transistors Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.2 x 4.2 x 5.33 mm   Frequency, Operating 250 MHz  NTE Electronics, Inc. Frequency, Operating 250 MHz  Bipolar Transistors Frequency, Operating 250 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 250 MHz   Gain, DC Current, Minimum 20  NTE Electronics, Inc. Gain, DC Current, Minimum 20  Bipolar Transistors Gain, DC Current, Minimum 20  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 20   Height 0.21" (5.33mm)  NTE Electronics, Inc. Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  NTE Electronics, Inc. Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.204" (5.2mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-92  NTE Electronics, Inc. Package Type TO-92  Bipolar Transistors Package Type TO-92  NTE Electronics, Inc. Bipolar Transistors Package Type TO-92   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  NTE Electronics, Inc. Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature Range, Junction, Operating -55 to +150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to +150 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to +150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Switch  NTE Electronics, Inc. Type Audio Amplifier, Switch  Bipolar Transistors Type Audio Amplifier, Switch  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Switch   Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 60 V  NTE Electronics, Inc. Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Collector to Emitter 40 V  Bipolar Transistors Voltage, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 40 V   Voltage, Collector to Emitter, Saturation 0.75 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.75 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.2 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.2 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.2 V   Voltage, Saturation, Collector to Emitter 0.75 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.75 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.75 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.75 V   Width 0.165" (4.2mm)  NTE Electronics, Inc. Width 0.165" (4.2mm)  Bipolar Transistors Width 0.165" (4.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.165" (4.2mm)  
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