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NTE152 - 

TRANSISTOR NPN SILICON 90V IC=4A TO-220AUDIO POWER AMP MEDIUM SPEED SWITCH

NTE Electronics, Inc. NTE152
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTE152
仓库库存编号:
70214889
技术数据表:
View NTE152 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTE152产品概述

Silicon Complementary Transistors, Audio Power Amplifier, Switch, NPN Transistor Type
  • Good linearity of hFE
    Designed for general purpose medium power switching and amplifier applications.
  • NTE152产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  4 A  
      Current, Emitter  -4 A  
      Current, Gain  15  
      Dimensions  10.67 L x 15.49 H mm  
      Frequency, Operating  8 MHz  
      Gain, DC Current, Maximum  200  
      Gain, DC Current, Minimum  40  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-220  
      Polarity  NPN  
      Power Dissipation  40 W  
      Primary Type  Si  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Range  Maximum of +150 °C  
      Transistor Type  NPN  
      Type  Audio Amplifier, Power  
      Voltage, Breakdown, Collector to Emitter  90 V  
      Voltage, Collector to Base  90 V  
      Voltage, Collector to Emitter  90 V  
      Voltage, Collector to Emitter, Saturation  1.5 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Saturation, Collector to Emitter  1.5 V  
    关键词         

    NTE152相关搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 4 A  NTE Electronics, Inc. Current, Collector 4 A  Bipolar Transistors Current, Collector 4 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 4 A   Current, Emitter -4 A  NTE Electronics, Inc. Current, Emitter -4 A  Bipolar Transistors Current, Emitter -4 A  NTE Electronics, Inc. Bipolar Transistors Current, Emitter -4 A   Current, Gain 15  NTE Electronics, Inc. Current, Gain 15  Bipolar Transistors Current, Gain 15  NTE Electronics, Inc. Bipolar Transistors Current, Gain 15   Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Dimensions 10.67 L x 15.49 H mm  Bipolar Transistors Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 10.67 L x 15.49 H mm   Frequency, Operating 8 MHz  NTE Electronics, Inc. Frequency, Operating 8 MHz  Bipolar Transistors Frequency, Operating 8 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 8 MHz   Gain, DC Current, Maximum 200  NTE Electronics, Inc. Gain, DC Current, Maximum 200  Bipolar Transistors Gain, DC Current, Maximum 200  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 200   Gain, DC Current, Minimum 40  NTE Electronics, Inc. Gain, DC Current, Minimum 40  Bipolar Transistors Gain, DC Current, Minimum 40  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  Bipolar Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  Bipolar Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.42" (10.67mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  Bipolar Transistors Package Type TO-220  NTE Electronics, Inc. Bipolar Transistors Package Type TO-220   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 40 W  NTE Electronics, Inc. Power Dissipation 40 W  Bipolar Transistors Power Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 40 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 90 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 90 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 90 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 90 V   Voltage, Collector to Base 90 V  NTE Electronics, Inc. Voltage, Collector to Base 90 V  Bipolar Transistors Voltage, Collector to Base 90 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 90 V   Voltage, Collector to Emitter 90 V  NTE Electronics, Inc. Voltage, Collector to Emitter 90 V  Bipolar Transistors Voltage, Collector to Emitter 90 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 90 V   Voltage, Collector to Emitter, Saturation 1.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.5 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Collector to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.5 V  
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