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Silicon NPN Transistor, 50 mA Collector Current, 200 mW Power Dissipation, 20 @ 3 mA Current Gain

Brand/Series	Transistor Series
Capacitance, Input	2 pF
Configuration	Common Base
Current, Collector	50 mA
Current, Gain	20
Diameter	5.58 mm
Dimensions	5.58 Dia. x 4.82 H mm
Frequency, Operating	600 MHz
Height	0.19" (4.82mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	4
Package Type	TO-72
Polarity	NPN
Power Dissipation	300 mW
Primary Type	Si
Temperature, Junction, Maximum	200 °C
Temperature, Junction, Minimum	-65 °C
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	Amplifier, Oscillator
Voltage, Breakdown, Collector to Emitter	45 V
Voltage, Collector to Base	30 V
Voltage, Collector to Emitter	45 V
Voltage, Collector to Emitter, Saturation	0.4 V
Voltage, Emitter to Base	3 V
Voltage, Saturation, Base to Emitter	1 V
Voltage, Saturation, Collector to Emitter	0.4 V
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 30V IC=0.05A TO-92 UHF OSCILLATOR FOR TUNER
  
  型号：NTE107
  仓库库存编号：70214855
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 30V 0.05A TO-92 RF/IF AMP
  
  型号：NTE108
  仓库库存编号：70214856
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 75V IC=0.6A TO-92 AUDIO TO VHF FREQUENCY DRIVER SWITCH CO
  
  型号：NTE123AP
  仓库库存编号：70214870
  
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• NTE Electronics, Inc.
  TRANSISTOR PNP SILICON 80V IC-1A TO92 LOW NOISE AUDIO AMP SWITCH COMP TO NTE123A
  
  型号：NTE159
  仓库库存编号：70214899
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 180V IC-0.6A HIGH VOLTAGE AMP HIGH SPEED SWITCH
  
  型号：NTE194
  仓库库存编号：70215730
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Capacitance, Input 2 pF  NTE Electronics, Inc. Capacitance, Input 2 pF  Bipolar Transistors Capacitance, Input 2 pF  NTE Electronics, Inc. Bipolar Transistors Capacitance, Input 2 pF   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 50 mA  NTE Electronics, Inc. Current, Collector 50 mA  Bipolar Transistors Current, Collector 50 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 50 mA   Current, Gain 20  NTE Electronics, Inc. Current, Gain 20  Bipolar Transistors Current, Gain 20  NTE Electronics, Inc. Bipolar Transistors Current, Gain 20   Diameter 5.58 mm  NTE Electronics, Inc. Diameter 5.58 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Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 4  NTE Electronics, Inc. Number of Pins 4  Bipolar Transistors Number of Pins 4  NTE Electronics, Inc. Bipolar Transistors Number of Pins 4   Package Type TO-72  NTE Electronics, Inc. Package Type TO-72  Bipolar Transistors Package Type TO-72  NTE Electronics, Inc. Bipolar Transistors Package Type TO-72   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 300 mW  NTE Electronics, Inc. Power Dissipation 300 mW  Bipolar Transistors Power Dissipation 300 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 300 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Junction, Maximum 200 °C  NTE Electronics, Inc. Temperature, Junction, Maximum 200 °C  Bipolar Transistors Temperature, Junction, Maximum 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Maximum 200 °C   Temperature, Junction, Minimum -65 °C  NTE Electronics, Inc. Temperature, Junction, Minimum -65 °C  Bipolar Transistors Temperature, Junction, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Minimum -65 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Oscillator  NTE Electronics, Inc. Type Amplifier, Oscillator  Bipolar Transistors Type Amplifier, Oscillator  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Oscillator   Voltage, Breakdown, Collector to Emitter 45 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 45 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 45 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 45 V   Voltage, Collector to Base 30 V  NTE Electronics, Inc. Voltage, Collector to Base 30 V  Bipolar Transistors Voltage, Collector to Base 30 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 30 V   Voltage, Collector to Emitter 45 V  NTE Electronics, Inc. Voltage, Collector to Emitter 45 V  Bipolar Transistors Voltage, Collector to Emitter 45 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 45 V   Voltage, Collector to Emitter, Saturation 0.4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V   Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 3 V   Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V   Voltage, Saturation, Collector to Emitter 0.4 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.4 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.4 V