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Silicon NPN Transistor, 400 V Collector to Emitter, 10 A Collector Current

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	10 A
Current, Gain	10
Device Dissipation	125 W
Diameter	22.2 mm
Dimensions	22.2 Dia. x 8.89 H mm
Frequency, Operating	2.5 MHz
Gain, DC Current, Minimum	10
Height	0.35" (8.89mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	2
Package Type	TO-3
Polarity	NPN
Power Dissipation	125 W
Primary Type	Si
Resistance, Thermal, Junction to Case	1 °C/W
Temperature, Junction, Operating	-65 to +150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +150 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	High Voltage, Switch
Voltage, Breakdown, Collector to Emitter	325 V
Voltage, Collector to Base	400 V
Voltage, Collector to Emitter	400 V
Voltage, Collector to Emitter, Saturation	0.7 V
Voltage, Emitter to Base	5 V
Voltage, Saturation, Base to Emitter	1.5 V
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Voltage, Switch  Bipolar Transistors Type High Voltage, Switch  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Switch   Voltage, Breakdown, Collector to Emitter 325 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 325 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 325 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 325 V   Voltage, Collector to Base 400 V  NTE Electronics, Inc. Voltage, Collector to Base 400 V  Bipolar Transistors Voltage, Collector to Base 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 400 V   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 0.7 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.7 V  Bipolar 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