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NTE198 - 

TRANSISTOR NPN SILICON 500V IC-1A TO-220 CASE HIGH VOLTAGE AUDIO AMP

NTE Electronics, Inc. NTE198
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE198
仓库库存编号：
70214931
技术数据表：
View NTE198 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE198产品概述

Silicon NPN Transistor, TO220 Type Package, Collector to Emitter 400 V

NTE198产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  1 A  
  Current, Gain  10  
  Device Dissipation  40 W  
  Dimensions  10.67 L x 15.49 H mm  
  Frequency, Operating  10 MHz  
  Gain, DC Current, Minimum  10  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarity  NPN  
  Power Dissipation  40 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  3.125 °C/W  
  Temperature, Junction, Operating  -65 to 150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Thermal Resistance, Junction to Ambient  62.5 °C⁄W  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Audio Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  400 V  
  Voltage, Collector to Base  500 V  
  Voltage, Collector to Emitter  400 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  5 V  
关键词         

NTE198相关搜索

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L x 15.49 H mm  Bipolar Transistors Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 10.67 L x 15.49 H mm   Frequency, Operating 10 MHz  NTE Electronics, Inc. Frequency, Operating 10 MHz  Bipolar Transistors Frequency, Operating 10 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 10 MHz   Gain, DC Current, Minimum 10  NTE Electronics, Inc. Gain, DC Current, Minimum 10  Bipolar Transistors Gain, DC Current, Minimum 10  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 10   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  Bipolar Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  Bipolar Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.42" (10.67mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE 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W  Bipolar Transistors Power Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 40 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 3.125 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 3.125 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 3.125 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 3.125 °C/W   Temperature, Junction, Operating -65 to 150 °C  NTE Electronics, Inc. Temperature, Junction, Operating -65 to 150 °C  Bipolar Transistors Temperature, Junction, Operating -65 to 150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Operating -65 to 150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Thermal Resistance, Junction to Ambient 62.5 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 62.5 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 62.5 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 62.5 °C⁄W   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Base 500 V  NTE Electronics, Inc. Voltage, Collector to Base 500 V  Bipolar Transistors Voltage, Collector to Base 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 500 V   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V  
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