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NTE222 - 

MOSFET N-CHANNEL DUAL GATE 20V IDSS= 5-35MA TO-72 CASE GATE PROTECTED VHF AMP/MI

NTE Electronics, Inc. NTE222
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE222
仓库库存编号：
70215784
技术数据表：
View NTE222 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE222产品概述

Dual Gate N-Channel MOSFET, Drain Current 50 mA, Temperature Range -65 to +175 °C
  • 12 MHz (Max.) bandwidth at VDD≥18 V
  • 300 °C lead temperature during soldering
    3.3 pF input capacitance, 3.5 dB noise figure at VDD≥18 V and 0.220 in. outer diameter.

    • NTE222产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  3.3 pF @15 V  
      Channel Mode  Depletion  
      Channel Type  N  
      Configuration  Dual Gate  
      Current, Drain  50 mA  
      Dimensions  5.58 (Dia) x 4.82 H mm  
      Height  0.19" (4.82mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -65 to +175 °C  
      Package Type  TO-72  
      Polarization  N-Channel  
      Power Dissipation  360 mW  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +175 °C  
      Voltage, Breakdown, Drain to Source  25 V  
      Voltage, Drain to Source  25 V  
      Voltage, Gate to Source  30 V  
      Width  0.22" (5.58mm) (Dia.)  
    关键词         

    NTE222相关搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 3.3 pF @15 V  NTE Electronics, Inc. Capacitance, Input 3.3 pF @15 V  MOSFET Transistors Capacitance, Input 3.3 pF @15 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 3.3 pF @15 V   Channel Mode Depletion  NTE Electronics, Inc. Channel Mode Depletion  MOSFET Transistors Channel Mode Depletion  NTE Electronics, Inc. MOSFET Transistors Channel Mode Depletion   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Dual Gate  NTE Electronics, Inc. Configuration Dual Gate  MOSFET Transistors Configuration Dual Gate  NTE Electronics, Inc. MOSFET Transistors Configuration Dual Gate   Current, Drain 50 mA  NTE Electronics, Inc. Current, Drain 50 mA  MOSFET Transistors Current, Drain 50 mA  NTE Electronics, Inc. MOSFET Transistors Current, Drain 50 mA   Dimensions 5.58 (Dia) x 4.82 H mm  NTE Electronics, Inc. Dimensions 5.58 (Dia) x 4.82 H mm  MOSFET Transistors Dimensions 5.58 (Dia) x 4.82 H mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 5.58 (Dia) x 4.82 H mm   Height 0.19" (4.82mm)  NTE Electronics, Inc. Height 0.19" (4.82mm)  MOSFET Transistors Height 0.19" (4.82mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.19" (4.82mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -65 to +175 °C  NTE Electronics, Inc. Operating and Storage Temperature -65 to +175 °C  MOSFET Transistors Operating and Storage Temperature -65 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -65 to +175 °C   Package Type TO-72  NTE Electronics, Inc. Package Type TO-72  MOSFET Transistors Package Type TO-72  NTE Electronics, Inc. MOSFET Transistors Package Type TO-72   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 360 mW  NTE Electronics, Inc. Power Dissipation 360 mW  MOSFET Transistors Power Dissipation 360 mW  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 360 mW   Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  MOSFET Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +175 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +175 °C  MOSFET Transistors Temperature, Operating, Range -65 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -65 to +175 °C   Voltage, Breakdown, Drain to Source 25 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 25 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 25 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 25 V   Voltage, Drain to Source 25 V  NTE Electronics, Inc. Voltage, Drain to Source 25 V  MOSFET Transistors Voltage, Drain to Source 25 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 25 V   Voltage, Gate to Source 30 V  NTE Electronics, Inc. Voltage, Gate to Source 30 V  MOSFET Transistors Voltage, Gate to Source 30 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source 30 V   Width 0.22" (5.58mm) (Dia.)  NTE Electronics, Inc. Width 0.22" (5.58mm) (Dia.)  MOSFET Transistors Width 0.22" (5.58mm) (Dia.)  NTE Electronics, Inc. MOSFET Transistors Width 0.22" (5.58mm) (Dia.)  
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